Doping Si into amorphous carbon can decrease humidity
sensitivity,
improve thermal stability, and retain excellent friction performance.
Experimental studies have shown that Si-doped amorphous carbon formed
Si–OH structures and frictional oxides in high-temperature
and humid environments. However, the formation process of Si–OH
and frictional oxides, as well as their structure, formation conditions,
and antifriction properties, remains unclear. In this paper, reactive
force field molecular dynamics (ReaxFF MD) was used to investigate
the frictional performance of a-C and a-C:Si (7.2 atom %) at temperatures
of 300, 700, and 1500 K in H2O environments. The results
showed that with increasing temperature, the friction force of a-C
increases from 8.2 nN at 300 K to 15.51 nN at 1500 K, while that of
a-C:Si decreases from 10.3 nN at 300 K to 5.6 nN at 1500 K. In H2O environments, a-C:Si formed a “H passivation layer/a-SiO2/H passivation layer” structure, which inhibited the
formation of interfacial bonds between the upper and lower substrates
and reduced the wear of the substrate while ensuring the antifriction
and antiwear properties of a-SiO2. This paper reveals the
mechanism behind the low friction characteristics of a-C:Si in high-temperature
and humid environments, providing theoretical guidance for the application
of a-C:Si under such conditions.