Structure and electrical characteristics of AlGaN/GaN MISHFET with Al2O3thin film as both surface passivation and gate dielectric

Tian, Benlang; Chen, Chao; Zhang, Jihua; Li, Yanrong; Chen, Yuanfu; Liu, Xingzhao; Zhou, Jianjun; Li, Liang; Chen, Chen

doi:10.1088/0268-1242/26/8/085023

Cited by 11 publications

(6 citation statements)

References 22 publications

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“…The simulated curves exhibit a maximum of 7ms/µm in single channels and 88ms/µm in four channels GAA MOESFT at V DS =1.0 V. This peak appearing in the curve of the transconductance depends mainly on the gate bias V GS and reflects the DC behavior of the simulated MOSFETs, which correspond to the channels modulated by different gate voltages. The DC characteristics obtained for a four channels devices are better, compared with a sample channel device that has obviously a slight inferior electrical properties earlier reported [23][24], the total parasitic resistance is usually dominated at low Ohmic contact resistance which is highly wanted, and can be attributed to the increase of carrier concentration or/and the increase of carrier mobility [25][26][27], We can note from our results that the g m value is more important for our four channel GAA MOEFTS compared to the single channel one . One of the major challenges for the miniaturization of the MOS transistor is to ge t a high report Ion/Ioff.…”

Section: Results and Analysismentioning

confidence: 69%

Impact of multiple channels on the Characteristics of Rectangular GAA MOSFET

Khaouani¹,

Guen-Bouazza²

2017

IJECE

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Square gate all around MOSFETs are a very promising device structures allowing to continue scaling due to their superior control over the short channel effects. In this work a numerical study of a square structure with single channel is compared to a structure with 4 channels in order to highlight the impact of channels number on the device’s DC parameters (drain current and threshold voltage). Our single channel rectangular GAA MOSFET showed reasonable ratio Ion/Ioff of 104, while our four channels GAA MOSFET showed a value of 103. In addition, a low value of drain induced barrier lowering (DIBL) of 60mV/V was obtained for our single channel GAA and a lower value of with 40mv/v has been obtained for our four channel one. Also, an extrinsic transconductance of 88ms/µm have been obtained for our four channels GAA compared to the single channel that is equal to 7ms/µm.

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Section: Results and Analysismentioning

confidence: 69%

Impact of multiple channels on the Characteristics of Rectangular GAA MOSFET

Khaouani¹,

Guen-Bouazza²

2017

IJECE

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“…In the previous study, the maximum saturation drain current was improved by about 34% by Al 2 O 3 gate dielectrics, which was shown in Ref. [22]. It indicates that the SBA thin film was a good candidate for the gate dielectric for an AlGaN/GaN MISHEMT and had a better effect on the output characteristics than Al 2 O 3 .…”

Section: Resultsmentioning

confidence: 72%

Performance of an AlGaN/GaN MISHEMT with sodium beta-alumina for gate insulation and surface passivation

Tian¹,

Chen²,

Zhang³

et al. 2013

J. Semicond.

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An AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MISHEMT), with sodium beta-alumina (SBA) for both gate insulation and surface passivation, was investigated and compared with a conventional metal-semiconductor high-electron-mobility transistor (MESHEMT). The measured gate leakage current of the MISHEMT was reduced by approximately one order of magnitude as compared with that of the conventional MESHEMT. The saturation drain current of the AlGaN/GaN MISHEMT reached 830 mA/mm, which was about 43% higher than that of a conventional MESHEMT. The peak extrinsic transconductance of the MISHEMT was 103 mS/mm, which was similarly higher than that of the MESHEMT. The results suggested that the SBA thin film is an effective candidate gate dielectric for AlGaN/GaN MISHEMTs.

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“…The voltage distribution across the canal led to a voltage difference between the gate and the channel along it, with the transistor demonstrating a variable resistance behavior controlled by the gate voltage. This indicates excellent gate control of the 2DEG channel [21], and the maximum drain current available reached 644 mA/mm when V GS was biased at 0.5 V & V DS =2.0 V. The pinch-off voltage was found to be −1.0 V, as shown in Figure 2(a).…”

Section: Resultsmentioning

confidence: 77%

Side Effects in a HEMT Performance with InAlN/GaN

Kourdi¹,

Bouazza²,

Guen-Bouazza³

et al. 2015

TIJEE

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We present a simulation of a HEMT (high electron mobility transistor) structure. We extract the device characteristics through the analysis of DC, AC and high frequency regimes, as shown in this paper. This work demonstrates the optimal device with a gate length of 30 nm, and InAlN/GaN heterostructure for minimizing side effects. The simulated with Silvaco software of the HEMT devices with the materials InAlN show very good scalability in different application. We have demonstrated an excellent current density, as high as 644 mA/mm, a peak extrinsic transconductance of 710 mS/mm at VDS=2 V, and cutting frequency cutoffs of 385 GHZ, maximum frequency of 810 GHz, maximum efficiency of 23% for x-Band, maximum breakdown voltage of 365 V, and an ON/OFF current density ratio higher than 8 x 108. These values were determined through the simulation by hydrodynamics models, which makes that optimize the design is the future of this technology.

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Structure and electrical characteristics of AlGaN/GaN MISHFET with Al₂O₃thin film as both surface passivation and gate dielectric

Cited by 11 publications

References 22 publications

Impact of multiple channels on the Characteristics of Rectangular GAA MOSFET

Impact of multiple channels on the Characteristics of Rectangular GAA MOSFET

Performance of an AlGaN/GaN MISHEMT with sodium beta-alumina for gate insulation and surface passivation

Side Effects in a HEMT Performance with InAlN/GaN

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