2022
DOI: 10.1016/j.ceramint.2022.01.337
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Structure and electrical conductivity of 0.5CSBT-0.5BFO ceramics sintered in air and N2

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Cited by 5 publications
(3 citation statements)
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“…Two different sets of peaks were detected near the binding energies (BEs) of 164.6 eV and 159.3 eV for the samples, which were attributed to Bi 4 f 5/2 and Bi 4 f 7/2 [ 23 ]. The orbital dipole splitting energy was BE(Bi 4 f 5/2 )-BE(Bi 4 f 7/2 ) = 5.3 eV, which corresponded to the + 3 valence oxidation state of the Bi ion and demonstrated that Bi 3+ was the dominant Bi form in the BWO samples [ 24 ]. Figure 6 c shows two peaks near 37.7 eV and 35.6 eV, corresponding to 4 f 5/2 and 4 f 7/2 of W, characteristic of W 6+ in the WO 4 octahedron [ 25 ].…”
Section: Resultsmentioning
confidence: 99%
“…Two different sets of peaks were detected near the binding energies (BEs) of 164.6 eV and 159.3 eV for the samples, which were attributed to Bi 4 f 5/2 and Bi 4 f 7/2 [ 23 ]. The orbital dipole splitting energy was BE(Bi 4 f 5/2 )-BE(Bi 4 f 7/2 ) = 5.3 eV, which corresponded to the + 3 valence oxidation state of the Bi ion and demonstrated that Bi 3+ was the dominant Bi form in the BWO samples [ 24 ]. Figure 6 c shows two peaks near 37.7 eV and 35.6 eV, corresponding to 4 f 5/2 and 4 f 7/2 of W, characteristic of W 6+ in the WO 4 octahedron [ 25 ].…”
Section: Resultsmentioning
confidence: 99%
“…[16][17][18][19] The ferroelectric and dielectric properties of the ceramic are largely dependent on the synthesis process, grain size, surface morphology, elemental composition, and sintering temperature. [20][21][22][23] For instance, 645 nm (average grain) sized SBT ceramics obtained by the sol-gel route have shown the highest remanent polariza-tion (2P r = 16.4 μC/cm 2 ) as well as the highest piezoelectric coefficient (d 33 = 22 pCN −1 ) when compared to that of 115 nm (2P r = 0.98 μC/cm 2 and d 33 = 10 pCN −1 ) and 1427 nm (2P r = 13.1 μC/cm 2 and d 33 = 17 pCN −1 ) sized SBT ceramics obtained by the same method. 20 The ferroelectric and dielectric properties of this ceramic can be tuned or improved by A-site, and B-site substitutions, with sintering aids, making solid solutions with other ferroelectric materials or composites.…”
Section: Introductionmentioning
confidence: 99%
“…From an application point of view, especially ferroelectric nonvolatile random access memory devices as well as high‐temperature piezoelectric devices; SBT is the most promising candidate without any hazardous constituents 16–19 . The ferroelectric and dielectric properties of the ceramic are largely dependent on the synthesis process, grain size, surface morphology, elemental composition, and sintering temperature 20–23 . For instance, 645 nm (average grain) sized SBT ceramics obtained by the sol–gel route have shown the highest remanent polarization (2 P r = 16.4 μC/cm 2 ) as well as the highest piezoelectric coefficient ( d 33 = 22 pCN −1 ) when compared to that of 115 nm (2 P r = 0.98 μC/cm 2 and d 33 = 10 pCN −1 ) and 1427 nm (2 P r = 13.1 μC/cm 2 and d 33 = 17 pCN −1 ) sized SBT ceramics obtained by the same method 20 .…”
Section: Introductionmentioning
confidence: 99%