2003
DOI: 10.1016/s0040-6090(03)01182-9
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Structure and electrical properties of ITO thin films deposited at high rate by facing target sputtering

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Cited by 66 publications
(27 citation statements)
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“…In terms of deposition, further development of high-end deposition techniques, such as ALD, low-temperature solution-based deposition processes, or new PVD system designs that avoid the direct exposure of the substrate to the plasma during deposition (e.g., high-density plasma-enhanced evaporation, [188,189] or facing target sputtering [190] ), is just one path to the development of ultra-high performance TCOs and TCOs/ device interfaces.…”
Section: Perspectivesmentioning
confidence: 99%
“…In terms of deposition, further development of high-end deposition techniques, such as ALD, low-temperature solution-based deposition processes, or new PVD system designs that avoid the direct exposure of the substrate to the plasma during deposition (e.g., high-density plasma-enhanced evaporation, [188,189] or facing target sputtering [190] ), is just one path to the development of ultra-high performance TCOs and TCOs/ device interfaces.…”
Section: Perspectivesmentioning
confidence: 99%
“…The PXRD patterns of the ITO-coated samples show a well defined (222) peak and to evidence other peaks, the pattern in the region 30°-60°was registered with a higher sensitivity. The films show the maximum intensity peak corresponding to the (222) orientation around 30.581°w hich is reported as favored direction of the grain growth observed for polycrystalline ITO films with higher oxygen content [29]. All other peaks observed were (211), (400), (411), (332), (431), (440), (611), and (622) appearing at 21.501°, 35.467°, 37.690°, 41.846°, 45.690°, 51.064°, 55.990°, and 61.680°, respectively.…”
Section: Atr-ftir Spectroscopymentioning
confidence: 80%
“…Although increasing the sputtering input power results in high kinetic energy of incident particles, it is necessary to improve the deposition rate and decrease the sputtering time synchronously [7]. Figure 5 shows the PL spectra of BAlq after ITO deposition below 10 mTorr Kr with an input power of 50 and 200 W. It should be noted that the PL intensity decreased only a little even when sputtering was performed using four times the power.…”
Section: Resultsmentioning
confidence: 99%
“…These results indicate that bombardment by high-energy ions and electrons causes considerable damage to the organic layer. FTS has been proven to be a good method for suppressing damage from negative oxygen ions and -electrons [5,7,8]. The set-up of a semi-sector-shaped metal shield on targets can also completely prevent damage from -electrons and enhance the photoluminescence properties of the organic layer [6].…”
Section: Methodsmentioning
confidence: 99%