Structure and electrical response of CaCu3Ti4O12 ceramics: Effect of heat treatments at the high vacuum

Influence of zinc on electrical and microstructural properties of CaCu3Ti4O12 ceramics prepared by sol–gel process

“…Although the process is able to produce high dielectric constant CCTO, the dielectric loss is relatively high. At present, the sol-gel synthesis of CCTO ceramics and films is becoming increasingly popular [16][17][18][19][20][21][22][23][24][25]. Elemental substitution which can often change the crystal structure and electronic structure is a common method in materials research, it may be used to assist with the understanding of the origin of giant dielectric constant observed in CCTO ceramics.…”

Photoluminescence behavior on Sr 2+ modified CaCu 3 Ti 4 O 12 based ceramics

“…In 2004, Chung et al [2] reported the non-ohmic property of CCTO. In order to understand the multifunctional behavior of such system, different researches are being conducted [3][4][5][6][7][8][9][10][11][12][13]. Several models have been proposed to explain the dielectric response such as: IBLC model (Internal Barrier Layer Capacitor) [14][15][16], and the NBLC model (Nanosized Barrier Layer Capacitor) [12,17].…”

The dimensional effect of dielectric performance in CaCu3Ti4O12 ceramics: Role of grain boundary

“…Intrinsic models, such as structurally frustrated relaxor ferroelectric behavior [7], Maxwell-Wagner relaxation based extrinsic models of Schottky barriers, such as contact-electrode depletion effect [9] and internal barrier layer capacitor model (IBLC) [4], and other extrinsic models such as slow trap charge repositioning model [8] have been proposed. Furthermore, in view of both non-ohmic property and giant dielectric behavior, the extrinsic models of Schottky barriers seem more promising to explain the performance of CCTO ceramics [3,5,[10][11][12][13][14].…”