Structure and electronic properties of chemically grown CdS films

Hecht, G.; Herberger, J.; Weißmantel, C.

doi:10.1016/0040-6090(68)90035-7

Cited by 5 publications

(2 citation statements)

References 4 publications

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“…Experimental verifications of the models discussed in the previous section, especially the predicted reduced mobility and its exponential dependence upon inverse temperature, have appeared throughout the literature. Compound semiconductors reported to follow these models include: CdS [29,32,61,[103][104][105][106][107][108][109][110][111][112][113][114][115]; CdSe [64,115,116]; CdTe [118][119][120][121]; PbS [38,122]; PbSe [38,47,52,122,125]; PbTe [38,55,[126][127][128]; InAs [129]; InP [92,[130][131][132][133]; InSb [134][135][136]; CuxS [137][138][139]...…”

Section: B the Resultsmentioning

confidence: 99%

Electrical Properties of Polycrystalline Semiconductor Thin Films

Kazmerski¹

1980

Polycrystalline and Amorphous Thin Films and Devices

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Section: B the Resultsmentioning

confidence: 99%

Electrical Properties of Polycrystalline Semiconductor Thin Films

Kazmerski¹

1980

Polycrystalline and Amorphous Thin Films and Devices

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“…WEISS~ANTEL et al [16] were the first to suggest this mechanism for the formation of CdS layers on evaporated Cd layers. Some of the facts which confirm this suggestion in our case are summarized as follows:…”

Section: Kinetics and Mechanism Of The Layer Formationmentioning

confidence: 97%

Direct synthesis of epitaxial AIIBVI semiconductor thin layers on metal single crystal substrates

Iwanov

Nanev

1979

Acta Physica

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The method of direct synthesis of A 11 B VI thin layers on metal single crystal substrates enables us to obtain the whole set of compounds of Zn and Cd with S, Se and Te. The morphology and the structure (texture and epitaxy) of the layers were investigated by means of TEM, SEM, X-ray and electron diffraction methods. The epitaxial layers have been synthesized at relatively low temperatures on the basal faces of the supporting single crystals.

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Nucleation and crystal growth during sulphidation and oxidation of thin zinc and cadmium films

Weißmantel¹,

Hecht²,

Herberger³

et al. 1970

Cryst Res and Technol

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The kinetics of sulphidation and oxidation of evaporated zinc and cadmium films in pure sulphur vapour and oxygen has been investigated. I n the temperature range from 100 to 250 "C a rapid gas sorption occurs which may be described by logarithmic expressions such as a = const . log ( t -t o ) . Subsequently a slow reaction is observed the time laws of which can also be represented by logarithmic expressions or by a general power law of the type a = const. t l / f i .Electron-optical and X-ray studies taken a t various stages of the reaction reveal a substantial effect of nucleation and recrystallization processes on the kinetics of layer growth. I n detail the following phases of layer growth could be confirmed: 2. Growth of oriented sulphide or oxide nuclei with diameters of lo2-lo3 a. Coalescence of these nuclei and formation of a coherent layer (in the case ofCdS and CdO formation of medium-size oriented crystallites). Formation of whiskers a t slightly higher temperatures.The results show that nucleation and recrystallization processes strongly affect the kinetics of the formation of surface films on metals. Therefore it can be concluded that it is necessary considerably to modify the theoretical attempts for a quantitative description of layer growth which in most cases are based on a homogeneous layer structure.An aufgedampften Zink-und Cadmiumfilmen wurde die Kinetik der Sulfidierung und der Oxydation in reinem Schwefeldampf bzw. Sauerstoff untersucht. Im Temperaturbereich zwischen 100 "C und 250 "C erfolgt zuniichst eine rasche Gasaufnahme, die durch logarithmische Ausdriicke der Form a = const * log ( t -to) beschrieben werden kann. Daren anschlieaend wird eine langsame Reaktion beobachtet, deren Zeitgesetz sich gleichfalls durch logarithmische Ausdrucke bzw. durch ein allgemeines Potenzgeset,z der Form a = const I tlifi wiedergeben 1aBt.Elektronenoptische

show abstract

Structure and electronic properties of chemically grown CdS films

Cited by 5 publications

References 4 publications

Electrical Properties of Polycrystalline Semiconductor Thin Films

Electrical Properties of Polycrystalline Semiconductor Thin Films

Direct synthesis of epitaxial AIIBVI semiconductor thin layers on metal single crystal substrates

Nucleation and crystal growth during sulphidation and oxidation of thin zinc and cadmium films

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