Structure and electronic properties of epitaxial metallic monolayers

Henzler, M.; Pfennigtorf, O.; Lang, Klaus‐Dieter; Lüer, T.; Moresco, Francesca; Hildebrandt, T.

doi:10.1016/s0039-6028(99)00568-3

Cited by 9 publications

(2 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Others have measured electrical conductivity of thin epitaxial metal films on Si as a function of the thickness at fixed temperature, 5,6 or as a function of the temperature at a fixed coverage. 7,8 The parallel subsurface conductance was not considered in these studies, which seems justified at high coverage and at temperatures well below the ''freeze-out'' temperature of mobile bulk carriers.…”

Section: Introductionmentioning

confidence: 99%

Electrical conductance of reconstructed silicon surfaces

Yoo

Weitering

2002

Phys. Rev. B

View full text Add to dashboard Cite

The electrical conductance of atomically clean, reconstructed silicon surfaces was studied as a function of temperature with macroscopic van der Pauw measurements in ultrahigh vacuum. The surface-state conductance of the Si(100)2ϫ1 surface was measured on a fully depleted silicon-on-insulator ͑SOI͒ substrate and on bulk Si. The surface-state conductance has metallic temperature dependence, but its magnitude falls below the universal conductance quantum. The data furthermore reveal a clear signature of the c(4ϫ2)→2ϫ1 surface phase transition near 200 K, which indicates that surface scattering increases with decreasing c(4ϫ2) order on the surface. The surface conductance of Si(111)7ϫ7 was measured only on a SOI substrate. The temperature coefficient is metallic and the magnitude is larger than the universal conductance quantum.

show abstract

Section: Introductionmentioning

confidence: 99%

Electrical conductance of reconstructed silicon surfaces

Yoo

Weitering

2002

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…Therefore, in order to measure the transport properties intrinsic to a surface or ultrathin film, experiments must be carried out in ultrahigh vacuum (UHV). UHV transport measurements on thin metal films have been reported [7][8][9][10][11], but the temperature dependence of the electrical conductivity has not been studied in the ultimate limit of a reconstructed surface layer. We have utilized bulk Si and ultrathin Si͞SiO 2 ͞Si or silicon-on-insulator (SOI) substrates to analyze the relative importance of the various conduction channels near the Si(100) surface as a function of temperature.…”

mentioning

confidence: 99%

Surface Conductance near the Order-Disorder Phase Transition on Si(100)

Yoo

Weitering

2001

Phys. Rev. Lett.

View full text Add to dashboard Cite

The surface conductance of the Si͑100͒-͑2 3 1͒ surface was measured as a function of temperature on a fully depleted Si͑100͒͞SiO 2 ͞Si substrate. The surface-state conductance is surprisingly large and reveals a clear signature of the c͑4 3 2͒ ! 2 3 1 order-disorder phase transition of buckled Si dimers on Si(100). Surface scattering increases with decreasing c͑4 3 2͒ order on the surface.

show abstract

5.4 Spa-Leed

Moritz¹

2015

Physics of Solid Surfaces

View full text Add to dashboard Cite

Structure and electronic properties of epitaxial metallic monolayers

Cited by 9 publications

References 13 publications

Electrical conductance of reconstructed silicon surfaces

Electrical conductance of reconstructed silicon surfaces

Surface Conductance near the Order-Disorder Phase Transition on Si(100)

5.4 Spa-Leed

Contact Info

Product

Resources

About