Structure and Electrophysical Properties of Double-component Film Alloys Based on Molybdenum and Iron or Nickel

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A perspective way for further increase in MOSFET transistors scaling value is the usage of Si, GaAs, ZnO nanowires and carbon nanotubes as channels between the source and drain. In this work, we present the results of a numerical simulation of 3D transistors with five n-type Si (SiNWFETs) channels based on SOI (Silicon-on-Insulator) technology and Gate-all-around (GAA) structure. 5-channel GAA SiNWFET structures are simulated by Silvaco TCAD tools. Their distinct electrical characteristics are demonstrated, in particular, the valid values of threshold voltage Vt, subthreshold scattering SS, drain induced barrier lowering (DIBL), leakage current Ioff and Ion/Ioff coefficient are obtained. The effect of temperature on static transmission characteristics is studied. A typical view of the MOSFET dependencies is obtained: the intersection of operating characteristics for different temperatures at a constant drain voltage due to a decrease in the switch-on current and threshold voltage Vt, the corresponding decrease in charge carrier mobility and energy redistribution of carriers, the Fermi energy shift to the middle of the band gap and the formation of a depleted region near the semiconductor surface at lower values of the electric field strength. At a fixed drain voltage of 1.2 V a further temperature increase in the range of 280-400 K leads to a decrease in the threshold voltage Vt by 22.5 %, an increase in the subthreshold scattering SS by 43.1 %, a decrease in the switch-on current by 10.7 % and a decrease in DIBL by 12.6 %.

Section: Simulation and Resultssupporting

confidence: 86%

Numerical Simulation of Field-effect Transistor GAA SiNWFET Parameters Based on Nanowires

Buryk¹,

Ivashchenko²,

Holovnia³

et al. 2020

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“…Based on these data and using the Atlas simulator, the main electrical parameters of photovoltaic converters are determined: open-circuit voltages UOC, short-circuit current densities JSC, maximum cathode current Im, maximum anode voltage Um, maximum power Pm, fill-factors FF, and photovoltaic efficiency  (Table 1), which are in good agreement with the experimental results of other authors [1][2][3][4][5][6][7]. Within the framework of the approach [17,19,20], the following equations are proposed to determine the temperature coefficients of the basic electrical parameters of solar cells.…”

Section: Simulation and Resultssupporting

confidence: 78%

Simulation of Parameters of Coaxial Solar Cells Based on Si and InP Nanowires

Buryk¹,

Odnodvorets²,

Khyzhnya³

2021

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The use of photovoltaic solar energy converters with nanowire solar cells is a promising direction for further development of photovoltaics. Along with this, significant interest in the properties of Si, InP, GaAs, InGaN nanowires as elements of high-efficiency photoconverters has formed a new direction of nanowire photovoltaics. The most relevant is the study of structural, optical, electrical, temperature and other characteristics of semiconductor nanowires. The paper presents the results of numerical simulation of coaxial p-in structures of solar cells based on Si and InP nanowires. The geometry of the 3D structures, light and dark current-voltage characteristics are designed using Silvaco TCAD tools. Within the framework of the drift-diffusion transport model with Fermi-Dirac statistics, the admissible values of the electrical parameters such as the open-circuit voltage UOC, short-circuit current density JSC, maximum power Pm, fill-factor FF, photovoltaic efficiency  and others are obtained. The temperature dependence of the current-voltage characteristics and electrical parameters is investigated. The temperature coefficients of the open-circuit voltage, short-circuit current density, fill-factor and efficiency for coaxial nanowire solar cells based on Si and InP are determined in the temperature range from 300 to 400 K. It is concluded that the thermal stability of the electrical parameters for InP-based photovoltaic converter is high, which is characteristic of direct band gap semiconductors. The obtained results of numerical simulation are in good agreement with the experimental data and can be used to predict the properties of nanowire solar cells.

“…In addition, in our works [10][11][12], the materials of transistor electrodes were analyzed in many aspectsfrom their manufacturing technology, structure, and electrophysical properties to the distribution of individual components in the gate in terms of effective output, and so on.…”

Section: -2mentioning

confidence: 99%

Electrical and Temperature Characteristics of Transistors with a Channel in the Form of a Carbon Nanotube

Buryk¹,

Martynenko²,

Odnodvorets³

et al. 2022

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Carbon nanotubes (CNTs) are promising materials for the formation of field-effect transistors (FETs) due to their excellent electrical, thermal, mechanical and other properties. High productivity, low power consumption, minimization of the impact of short-channel effects, etc., are of significant practical interest primarily to coaxial CNTFETs. This paper presents the results of numerical simulation of coaxial gate-allaround (GAA) CNTFETs. The structure of GAA CNTFETs is designed using Silvaco TCAD tools and their electrical parameters are investigated. The drift diffusion model of transport, taking into account the Bohm quantum potential, demonstrates excellent characteristics for three-dimensional models, in particular, valid values are obtained for the threshold voltage Vt, subthreshold swing SS, switching current Ion, leakage current Ioff and Ion/Ioff coefficient. The influence of temperature on the specified electrical parameters at low bias voltages is studied and the typical character of temperature dependences for semiconductor devices is obtained. It is established that the values of the threshold voltage Vt and subthreshold swing SS decrease and increase, respectively, with increasing temperature from 250 to 500 K. Along with this, there is a slight decrease in the switching current by 1.6 % in a given temperature range at the source voltage VDD  -1.0 V. The thermal stability of coaxial structures of nanotransistors with a channel in the form of a single-walled CNT is evaluated by the temperature coefficients