Structure and evolution of the displacement field in hydrogen-implanted silicon

Cerofolini, G. F.; Meda, L.; Volpones, C.; Ottaviani, G.; Defayette, J; Dierckx, Rudi; Donelli, Davide; Orlandini, M; Anderle, M.; Canteri, R.; Claeys, Corneel; Vanhellemont, Jan

doi:10.1103/physrevb.41.12607

Cited by 39 publications

(7 citation statements)

References 19 publications

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“…It is believed that the H + 2 ion splits upon impact with the wafer surface, coming to rest as a hydrogen atom. The implantation of H + 2 is therefore equivalent to the implantation of H + with half the energy 64.5 keV and twice the dose 5 × 10 16 cm −2 [5,19]. Figure 1 gives the calculated profile for the implantation energy of 129 keV (H + 2 ).…”

Section: Methodsmentioning

confidence: 99%

Properties of hydrogen induced voids in silicon

Weber

Fischer

Hieckmann

et al. 2005

J. Phys.: Condens. Matter

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After heat treatment, silicon samples implanted with high doses of hydrogen exhibit blistering and defoliation of thin silicon layers. The process is used commercially in the fabrication of thin silicon-on-insulator layers (Smart Cut ® ).In the present study we investigate the behaviour of hydrogen after different processing steps, which lead to thin Si layers bonded to glass substrates. A set of hydrogen implanted samples is studied by means of low temperature photoluminescence, Raman spectroscopy, x-ray diffraction and optical microscopy (visible and infrared). The formation of Si-H bonds is detected after implantation together with a build-up of internal strain. After annealing, the relaxation of the implanted layers is found to be connected with the formation of hydrogen saturated vacancies and the formation of H 2 molecules filling up larger voids. A comparison is made with hydrogen plasma treated samples, where well defined platelets on {111} planes are found to trap hydrogen molecules. No direct evidence of the role of {111} and {100} platelets in the blistering process is found in the implanted layers from our study. We determine considerable compressive stresses in the bonded Si layers on glass substrates. The photoluminescence is strongly enhanced in these bonded layers but red-shifted due to a strain reduced band gap.

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Section: Methodsmentioning

confidence: 99%

Properties of hydrogen induced voids in silicon

Weber

Fischer

Hieckmann

et al. 2005

J. Phys.: Condens. Matter

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“…While the platelets in plasma-hydrogenated Si are parallel to the ͑111͒ plane, the platelets formed in hydrogen ion implanted Si are parallel to the surface of substrate. [3][4][5] This difference arouses questions about the dominant driving force for platelets formation and the ultimate blistering or cleaving in H implanted Si. A recent ab initio study finds that hydrogenated platelets on both ͑100͒ and ͑111͒ planes have similar free energies leading the authors to conclude that the crystallographic orientation of platelets is determined by kinetic rather than thermodynamic factors.…”

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confidence: 99%

Role of strain in the blistering of hydrogen-implanted silicon

Lee

Lin

Jia

et al. 2006

Applied Physics Letters

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The authors investigated the physical mechanisms underlying blistering in hydrogen-implanted silicon by examining the correlation between implantation induced damage, strain distribution, and vacancy diffusion. Using Rutherford backscattering, scanning electron microscopy, and atomic force microscopy, they found that the depth of blisters coincided with that of maximum implantation damage. A model based on experimental results is presented showing the effect of tensile strain on the local diffusion of vacancies toward the depth of maximum damage, which promotes the nucleation and growth of platelets and ultimately blisters.

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“…In the last several years, a systematic effort for studying the hydrogen-defect interaction in crystalline silicon has been performed by a group of researchers, including some of the present authors (Cerofolini et al, 1990;Brusa et al, 1994;Bruni et al, 1994;Cerofolini et al, 1995;Rakvin et al, 2000;Mikšić et al, 2002). The guiding idea behind this series of studies was to reduce the complexity of the problem by concentrating attention on silicon samples implanted at an energy low enough to avoid the production of dense collisional cascades.…”

Section: Introductionmentioning

confidence: 99%

Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon

Dubček¹,

Pivac²,

Bernstorff³

et al. 2003

J Appl Cryst

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Grazing incidence small-angle X-ray scattering was used to study monocrystalline silicon samples implanted with deuterium ions at an energy of 24 keV and to the dose of 2 × 10 16 ions/cm 2 . Samples were annealed isochronally at different temperatures in the range from 393 to 973 K. Due to the relaxation of the defects structures, i.e. redistribution of vacancies and deuterium, strong particle like contribution is observed in addition to the rough surface scattering, already at 393 K annealing. During the annealing, this particles (agglomerations of vacancies) are gradually dissolved till 623 K annealing temperature. Another agglomeration mechanism takes over at about 773 K when a different type of particle growth is observed, and these are dissolved again at about 973 K. The sizes of detected particles are in 2-3 nm range. Also, the interference type of scattering from a film of about 30 nm thickness (the top layer, mostly unaffected by implantation)is observed. This film is gradually getting thinner with the increasing annealing temperature, due to the redistribution of the defects and the structure relaxation.

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Structure and evolution of the displacement field in hydrogen-implanted silicon

Cited by 39 publications

References 19 publications

Properties of hydrogen induced voids in silicon

Properties of hydrogen induced voids in silicon

Role of strain in the blistering of hydrogen-implanted silicon

Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon

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