Structure and growth of single crystal SiP 2 using flux method

Zhang, Xiang; Wang, Shanpeng; Ruan, Huapeng; Zhang, Guodong; Tao, Xutang

doi:10.1016/j.solidstatesciences.2014.08.009

Cited by 21 publications

(18 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Single-crystalline samples were synthesized by using the tin flux method 37 . Silicon, phosphorus, gadolinium and tin were mixed at a Si:P:Gd:Sn ratio of 1:6:0.03:5 and sealed into evacuated quartz tubes.…”

Section: Methodsmentioning

confidence: 99%

Unconventional excitonic states with phonon sidebands in layered silicon diphosphide

et al. 2022

View full text Add to dashboard Cite

Complex correlated states emerging from many-body interactions between quasiparticles (electrons, excitons and phonons) are at the core of condensed matter physics and material science. In low-dimensional materials, quantum confinement affects the electronic, and subsequently, optical properties for these correlated states. Here, by combining photoluminescence, optical reflection measurements and ab initio theoretical calculations, we demonstrate an unconventional excitonic state and its bound phonon sideband in layered silicon diphosphide (SiP2), where the bound electron–hole pair is composed of electrons confined within one-dimensional phosphorus–phosphorus chains and holes extended in two-dimensional SiP2 layers. The excitonic state and emergent phonon sideband show linear dichroism and large energy redshifts with increasing temperature. Our ab initio many-body calculations confirm that the observed phonon sideband results from the correlated interaction between excitons and optical phonons. With these results, we propose layered SiP2 as a platform for the study of excitonic physics and many-particle effects.

show abstract

Section: Methodsmentioning

confidence: 99%

Unconventional excitonic states with phonon sidebands in layered silicon diphosphide

et al. 2022

View full text Add to dashboard Cite

show abstract

“…64 Later, SpringThorpe grown SiP2 crystals with a similar morphology using solution synthesis in molten Sn containing a considerable amount of Mg. 65 An akin approach but using Gd as a mineralizer has been recently utilized to synthesize another orthorhombic SiP2 phase with Pnma crystal symmetry. 66 The possibility to grow two different SiP2 phases by slight variation of the synthesis conditions indicates their close energetics. It is not surprising, similar to SiP, both orthorhombic SiP2 phases consist of nearly-identical vdWbonded 2d sheets with distinct stacking arrangements as illustrated in Figs.…”

Section: Resultsmentioning

confidence: 99%

“…Up to date, a few successful syntheses of two distinct layered SiP2 structures were reported. [64][65][66] First, Wadsten synthesized needle-like crystals of SiP2 from a stoichiometric mixture of the pure elements and identified their crystal structure as orthorhombic Pbam using X-ray diffraction (XRD) techniques. 64 Later, SpringThorpe grown SiP2 crystals with a similar morphology using solution synthesis in molten Sn containing a considerable amount of Mg. 65 An akin approach but using Gd as a mineralizer has been recently utilized to synthesize another orthorhombic SiP2 phase with Pnma crystal symmetry.…”

Section: Resultsmentioning

confidence: 99%

Tailoring electronic properties of multilayer phosphorene by siliconization

Malyi

Sopiha

Radchenko

et al. 2018

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

Controlling the thickness dependence of electronic properties for two-dimensional (2d) materials is among the primary goals for their large-scale applications. Herein, employing a first-principles computational approach, we predict that Si interaction with multilayer phosphorene (2d-P) can result in the formation of highly stable 2d-SiP and 2d-SiP compounds with a weak interlayer interaction. Our analysis demonstrates that these systems are semiconductors with band gap energies that can be governed by varying the thicknesses and stacking arrangements. Specifically, the siliconization of phosphorene allows designing 2d-SiP materials with a significantly weaker thickness dependence of electronic properties than that in 2d-P and to develop ways for their tailoring. We also reveal the spatial dependence of electronic properties for 2d-SiP highlighting the difference in the effective band gaps for different layers. Particularly, our results show that the central layers in the multilayer 2d systems determine their overall electronic properties, while the role of the outermost layers is noticeably smaller.

show abstract

“…The lengths of Si-P bonds in orthorhombic SiP 2 range from 2.2378(8) to 2.3217(14)Å. 19 The length of the Si-P bond in CdSiP 2 is 2.2469(7)Å. 1 Our results show that the lengths of Si-P bonds in FSP range from 2.2303(62) to 2.3233(72)Å, which is comparable with those in orthorhombic SiP 2 and CdSiP 2 .…”

Section: Resultsmentioning

confidence: 99%