Structure and internal stress in ultra-thin silver films deposited on MgF2 and SiO substrates

Abermann, R.; Kramer, R.; Mäser, J.

doi:10.1016/0040-6090(78)90140-2

Cited by 137 publications

(38 citation statements)

References 17 publications

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“…We expect that the compressive-tensile-compressive (CTC) behavior is similar in origin to that found for other Volmer-Weber growth mode 27 thin film systems. 28,29 In general, CTC transitions in stress 30 correlate with island nucleation and growth, island coalescence, and postcoalescence growth. 31 At the earliest stage of growth, films consist of discrete islands.…”

Section: ∆D(t)/dmentioning

confidence: 99%

Microstructure, Phase Formation, and Stress of Reactively-Deposited Metal Hydride Thin Films

Adams¹,

Romero²,

Rodriguez³

et al. 2002

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Section: ∆D(t)/dmentioning

confidence: 99%

Microstructure, Phase Formation, and Stress of Reactively-Deposited Metal Hydride Thin Films

Adams¹,

Romero²,

Rodriguez³

et al. 2002

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“…또한 interlayer 증착에 . 높은 이동 도 금속 박막 증착을 멈추었을 때 인장 응력 방향 으로의 응력 이동은 결정립계와 박막 표면간의 화 학 포텐셜 차이에 의해 발생된다고 그 동안 보고되 어왔다 1,2) . 본 실험을 통해 이 주장을 증명 할 수 있 었다.…”

Section: -14)unclassified

The Effect of Grain Size on the Stress Shift toward Tensile Side by Deposition Interruptions in Copper Thin Films

Seri¹,

Oh²,

Kim³

2014

Journal of the Korean institute of surface engineering

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In this study, the average in-situ stress in metallic thin film was measured during deposition of the Cu thin films on the Si(111) wafer and then the phenomenon of stress shift by the interruption of deposition was measured using Cu thin films. We have observed the stress shift in accordance with changing amount of atom's movement between the surface and grain boundary through altering the grain size of the Cu thin film with variety of parameters. The grain size is known to be affected on the deposition rate, film thickness and deposition temperature. As a experimental results, the these parameters was not adequate to explain stress shift because these parameters affect directly on the amount of atom's movement between the surface and grain boundary as well as the grain size. Thus, we have observed the stress shift toward tensile side in accordance with the grain size changing through the interlayer deposition. From an experiment with inserting interlayer before deposit Cu, in thin film which has big grain size with high roughness, amount of stress movement is higher along direction of tensile stress after deposition that means, after deposition process, driving force of atoms moving in grain boundary and on the surface of the film is relatively higher than before.

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“…2 the upper graph of RT and 200°C represents a typical behavior at both temperatures, which is shown for the purpose of contrast to the case of 300°C. While the Cr film deposited at RT and 200°C showed typical stress behavior of metals with low mobility, showing mainly the stage of tensile stress, 5,6) the in-situ stress from the film deposited at 300°C significantly differed from typical stress behavior of low mobility metals. The mobility may be one of the key factors for the difference in the in-situ stress behavior; the low mobility metal, in this case Cr, can behave like high mobility metals (such as Al) at 300°C.…”

Section: The Effect Of Deposition Temperature Of Cr Thin Filmmentioning

confidence: 99%

“…5,6) The tensile stress stage is known to be related to film densification where selfdiffusion is actively involved. Generally the self-diffusion coefficient of metals, D, is expressed in the following form,…”

Section: The Effect Of Deposition Temperature Of Cr Thin Filmmentioning

confidence: 99%

“…High mobility metals such as Al, Cu, and Ag show three stress stages of initial compressive, tensile, and subsequent compressive stress, while relatively low mobility metals such as Cr, Ti, and W show only two stress stages of compressive and tensile stress. 5,6) When the depositing metals form islands at the beginning of deposition, the islands cause initial compressive stress due to their surface energy. 7,8) The islands grow to form a continuous film as the deposition proceeds, resulting in volume shrinkage to cause tensile stress in the thin film.…”

Section: Introductionmentioning

confidence: 99%

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Stress Shift to Tensile Side by the Interruption of Deposition during Al and Cr Film Processing

Kim

2014

Mater. Trans.

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When an average stress in metallic thin film was measured as a function of the film thickness during real time deposition, three distinct stress stages of initial compressive, tensile, and compressive were reported to occur for metals with relatively high mobility. A reversible stress shift to the tensile side was observed due to an abrupt interruption of deposition at the compressive stage. The stress shift occurred rapidly in the beginning and rather slowly later, to reach a saturation value.The current study explored the stress shift caused by an abrupt interruption of deposition with focus on the state and magnitude of the thin film stress for the two metals, Al and Cr, with different levels of mobility. For Cr with relatively low mobility, only tensile stress was observed at room temperature deposition, but the three stress stages were observed for Cr deposited at 300°C. It is argued that mobility is a possible factor for the stress evolution mode of the thin film as the diffusivity of Cr at 300°C has a similar order of magnitude as that of Al at the room temperature. No stress shift was observed when deposition interruption occurred at the tensile stress state, but the shift was observed only at the compressive stress state for both Al and Cr. The total amount of stress shift increased as the magnitude of compressive stress at the point of interruption increased for Al.

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Structure and internal stress in ultra-thin silver films deposited on MgF2 and SiO substrates

Cited by 137 publications

References 17 publications

Microstructure, Phase Formation, and Stress of Reactively-Deposited Metal Hydride Thin Films

Microstructure, Phase Formation, and Stress of Reactively-Deposited Metal Hydride Thin Films

The Effect of Grain Size on the Stress Shift toward Tensile Side by Deposition Interruptions in Copper Thin Films

Stress Shift to Tensile Side by the Interruption of Deposition during Al and Cr Film Processing

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