2012
DOI: 10.1016/j.jallcom.2011.12.015
|View full text |Cite
|
Sign up to set email alerts
|

Structure and magnetic characteristics of Si-doped AlN films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4

Citation Types

5
15
0

Year Published

2013
2013
2022
2022

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 34 publications
(20 citation statements)
references
References 37 publications
5
15
0
Order By: Relevance
“…Besides the above mentioned nano-cages, the composite metal-nanocages have potential applicants in different areas such as optical and magnetic devices, and catalysis [28]. For example there are several first-principles theoretical reports on metal interaction with AlN and GaN [28][29][30][31][32][33]. Zhang et al [28] used DFT method to search for the probability of bare-and Ni-adsorbed AlN nano-cages for hydrogen storage.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Besides the above mentioned nano-cages, the composite metal-nanocages have potential applicants in different areas such as optical and magnetic devices, and catalysis [28]. For example there are several first-principles theoretical reports on metal interaction with AlN and GaN [28][29][30][31][32][33]. Zhang et al [28] used DFT method to search for the probability of bare-and Ni-adsorbed AlN nano-cages for hydrogen storage.…”
Section: Introductionmentioning
confidence: 99%
“…al. [29] investigated the effect of Si-doping on AlN films. They showed that Si is a potential nonmagnetic dopant for preparing diluted magnetic semiconductor films.…”
Section: Introductionmentioning
confidence: 99%
“…In order to eliminate these extrinsic magnetic behaviors, many researches have been focused on investigating the effect of nonmagnetic element doping in semiconductors. Recently, there have been reports of high-temperature ferromagnetism in some oxide and nitride semiconductors by doping nonmagnetic elements [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27]. At the same time, first-principle calculations showed that appropriate nonmagnetic anion or cation substitutions in several oxide, nitride or sulfide semiconductors can induce intrinsic ferromagnetism .…”
Section: Introductionmentioning
confidence: 99%
“…Among the potential host materials for DMS/DMI, AlN based DMS/DMI have been extensively studied since they exhibit room temperature ferromagnetism [5][6][7]. However, some references indicated that the ferromagnetism may come from magnetic precipitates or other clusters [8,9].…”
Section: Introductionmentioning
confidence: 99%