Molybdenum nitride (MoN x ) thin films were deposited on p-type Si(1 0 0) wafer using reactive radio frequency magnetron sputtering at various nitrogen gas ratios in an ultra high vacuum (UHV) system. Two metallic phases, Mo(1 1 0) and Mo(2 1 1), were detected from the film obtained without nitrogen gas in the sputter gas. The thickness of the films measured with a surface profiler decreased from 186.0 to 21.5 nm with increasing nitrogen gas ratio in the sputter gas from 0 to 100%, respectively. From the X-ray photoelectron spectroscopy (XPS) analysis, Mo species were further oxidized by the addition of nitrogen gas in the sputter gas. As nitrogen gas was introduced, the portion of Mo 4+ species decreased while those of Mo 5+ and Mo 6+ species increased. As the nitrogen gas ratio in the sputter gas increased, the formation of MoN x thin films was confirmed by N 1s XPS spectra. The conductivity decreased from 927.7 to 97.1 S/cm with 0 and 100% of nitrogen gas ratio, respectively.Keywords: Mo nitride, Radio frequency magnetron sputtering, X-ray photoelectron spectroscopy, X-ray diffraction, Conductivity, Ultra high vacuum
IntroductionMolybdenum nitride (MoN x ) thin films have been applied as anodes of Ni batteries, 1 catalysts, 2-4 and diffusion barriers [5][6][7][8][9][10][11][12][13][14] because MoN x thin films have outstanding properties for these applications, such as morphology, 3 low resistivity, 13 and hardness.14 Various methods for synthesizing MoN x thin film have been reported including hydrothermal method, 2 cathodic arc evaporation method, 10 chemical solution method, 11 radio frequency (rf ) sputtering, 13-16 dc sputtering, 5-9,17-19 and hightemperature plasma. 20 Previous studies have adapted sputtering methods to fabricate MoN x thin films because it can be applied in low-temperature environment and for large-area substrate. These advantages make sputtering a more efficient method for industry than others. Previously reported results of fabrication of MoN x films used sputtering methods. [5][6][7][8][9][13][14][15][16][17][18] Anitha et al. prepared MoN x thin film using rf magnetron sputtering with varying nitrogen gas ratio. The crystallization was determined as Mo 2 N with several phases. 13 With increasing nitrogen gas ratio from 0 to 89%, resistivity increased from 0.26 to 6.00 μΩm. Kumar et al. used reactive dc magnetron sputtering for deposition of MoN x films as nitrogen gas flow changed from 0 to 20 sccm. Deposition rate of MoN x thin films decreased as nitrogen flow rate increased.6 Crystallinity changed as nitrogen gas ratio increased from γ-Mo 2 N(1 1 1) through β-Mo 2 N(2 0 0), Mo 3 N 2 (1 1 1), Mo 16 N 7 (4 0 0), β-Mo 2 N(2 2 0), and Mo 5 N 6 (1 1 0), to Mo 16 N 7 (4 0 0). Resistivity of MoN x thin films increased from 3.0 × 10 −9 to 1.8 × 10 −6 Ωm as nitrogen ratio increased from 0 to 33%. MoN x thin film was thermally stable below 600 C. However, they did not give any information about composition of the surface and oxidation states of Mo. In this study, we report the results of...