Thin films (100-400 nm) of BaxSr1-xTiO3 (0≤x≤1) deposited in RF-magnetron co-sputtering equipment are presented in this research work. The change of deposition rate, gap energy, and resistivity as a function of temperature-applied power change in the growth parameters was studied through the ISO colour-code lines constructed with MATLAB:By analysing the trend information and take into account the influence of the calculated "x" parameter with the Boltzmann profile fitting is proposed a method to allow a controlled set up of the RFmagnetron co-sputtering system and predict the Eg and resistivity values in the BaxSr1-xTiO3 solid solution with 0≤x≤1 for amorphous and crystalline phases. Also, a versatile tool to optimise the deposition process and material properties.keywords: BaxSr1-xTiO3 films; boltzmann modelling; optical band gap; deposition rate; stoichiometric content Preprints (www.preprints.org) | NOT PEER-REVIEWED | Posted: