Structure and optical properties of GeTe film controlled by amorphous to crystalline phase transition

Lan, Wanting; Cao, Linghong; Fu, Yajun; Fang, Jinjing; Zhang, Jingsong; Wang, Jin

doi:10.1016/j.vacuum.2021.110847

Vacuum

2022

DOI: 10.1016/j.vacuum.2021.110847

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Structure and optical properties of GeTe film controlled by amorphous to crystalline phase transition

Wanting Lan

Linghong Cao

Yajun Fu

et al.

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Cited by 9 publications

References 35 publications

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Continuous Growth of Crystalline InGaZnO on InLaO by Spray Pyrolysis for High‐Performance Thin‐Film Transistors with Excellent Stability

Ali,

Islam,

Jang

2024

Adv Materials Technologies

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InGaZnO (IGZO) based thin film transistors (TFTs) are successfully employed in commercial displays due to their excellent electrical properties but next‐generation displaybackplanes demand higher mobility. A heterojunction structure crystalline oxides can offer superior mobility and stability. Herein, the continuous growth of IGZO is reported on the crystalline InLaO (ILO) layer by spray pyrolysis, which closely resembles the crystalline structure of grown ILO layer. The crystalline structure of the IGZO is confirmed by grazing incidence X‐ray diffraction and high‐resolution transmission electron microscopy. The bilayer IGZO/ILO TFT exhibits remarkable electrical performance, including a high saturation mobility of 55.0 cm2 V−1 s−1, low subthreshold swing of 110 mV dec−1, and high ION/OFF ratio of ≈109 with excellent stability under positive bias temperature stress with In addition, the inverter and ring oscillator based on the IGZO/ILO TFTs demonstrate a high voltage gain of 120 and a low propagation delay of 16.8 ns, respectively. The remarkable performance of bilayer IGZO/ILO TFT by spray pyrolysis is attributed to the In2O3‐like crystalline IGZO grown on ILO film. This leads to reduced lattice mismatch, resulting in minimizing grain boundaries and defects that can hinder electron transport at the interface. The matched crystal structure leads to efficient charge transport at the IGZO and ILO heterojunction, resulting in remarkable TFT performance.

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Continuous Growth of Crystalline InGaZnO on InLaO by Spray Pyrolysis for High‐Performance Thin‐Film Transistors with Excellent Stability

Ali,

Islam,

Jang

2024

Adv Materials Technologies

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Low‐Temperature Synthesis of GeTe Nanoparticles

Bouška,

Milasheuskaya,

Šlouf

et al. 2024

Chemistry A European J

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Nanoparticles can offer an alternative approach to fabricate phase‐change materials. The chemical synthesis of GeTe nanoparticles using organometallic precursors exploits high‐boiling solvents and relatively high temperatures (close or even above crystallization temperatures), as reported in the available literature. The aim of this work is the preparation of GeTe nanoparticles by a low‐temperature synthetic method exploiting new organometallic precursors and common organic solvents. Indeed, different preparation methods and characterization of GeTe nanoparticles is discussed. The characterization of the prepared nanomaterial was performed on the basis of X‐ray diffraction, transmission electron microscopy, scanning electron microscopy with energy dispersive X‐ray spectroscopy, laser ablation time‐of‐flight mass spectrometry, Raman scattering spectroscopy, and dynamic light scattering. The results show that the low‐temperature synthetic route leads to amorphous GeTe nanoparticles. Exploited organometallic precursor is stabilised by neutral ligand which can be isolated after the reaction and repeatedly used for further reactions. Furthermore, GeTe nanoparticle size can be tuned by the conditions of the synthesis.

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GeTe/CrSb2Te superlattice-like thin film for excellent thermal stability and high phase change speed

Wei

et al. 2023

Journal of Alloys and Compounds

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Structure and optical properties of GeTe film controlled by amorphous to crystalline phase transition

Cited by 9 publications

References 35 publications

Continuous Growth of Crystalline InGaZnO on InLaO by Spray Pyrolysis for High‐Performance Thin‐Film Transistors with Excellent Stability

Continuous Growth of Crystalline InGaZnO on InLaO by Spray Pyrolysis for High‐Performance Thin‐Film Transistors with Excellent Stability

Low‐Temperature Synthesis of GeTe Nanoparticles

GeTe/CrSb2Te superlattice-like thin film for excellent thermal stability and high phase change speed

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