Structure and photoluminescence properties of epitaxially oriented GaN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy

Chen, Hung-Ying; Lin, Hung-Wen; Shen, Chih-Ya; Gwo, Shangjr

doi:10.1063/1.2404597

Cited by 93 publications

(59 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Indeed, it should be noticed that the spectral interval where the narrow peaks appear in the present samples overlaps with the DAP band in WZ and ZB GaN (E $ 3.0-3.3 eV), 10,25,26 which has also been reported in nanowires. 18,[27][28][29] However, the attribution of the narrow peaks in the 3.1 eV-3.42 eV range to DAP seems to be inappropriate in the present case. The DAP emission is indeed characterized by a very different spectral shape in GaN thin film and nanowire samples, 18,25,26,28,29 where the two dominant emissions are at 3.21 eV and 3.27 eV and are significantly broader than the features found in the present samples.…”

Section: Discussionmentioning

confidence: 56%

Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

Jacopin

Rigutti

Largeau

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

The optical and structural properties of wurtzite GaN nanowires containing zinc-blende GaN inclusions of different thicknesses are investigated. Micro-photoluminescence spectra of single nanowires exhibit a series of narrow emission peaks with linewidth as low as 0.8 meV in the interval 3.1-3.42 eV. The peak energy blue-shifts with increasing excitation power following a $I 1/3 law due to the progressive band filling and to the screening of the internal field. The quantum confinement in these type-II crystal phase heterostructures was simulated in the framework of a one-dimensional effective mass model, accounting for the internal electrical polarization of the wurtzite GaN. The predicted transition energies are in good agreement with the energy statistics realized on more than 30 single nanowire emission spectra.

show abstract

Section: Discussionmentioning

confidence: 56%

Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

Jacopin

Rigutti

Largeau

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…These techniques are time consuming and might degrade the quality of the structures. Thus, a self-organized or in situ structuring process would be preferable and was presented to take place on Si(111) substrates [10][11][12]. In this paper we report on GaN nanorods grown by plasma assisted molecular beam epitaxy (PAMBE) on nitridated r-plane sapphire substrates.…”

mentioning

confidence: 97%

Catalyst free self‐organized grown high‐quality GaN nanorods

Aschenbrenner

Kunert

Freund

et al. 2011

Physica Status Solidi (b)

View full text Add to dashboard Cite

Highly ordered GaN nanorods were grown self-organized and without catalyst on r-plane sapphire by molecular beam epitaxy while the AlN nucleation sites for the nanorods were provided by a nitridation process using a metal-organic vapor-phase epitaxy system. The growth window for the nanorod formation was analysed in detail and turned out to be very sensitive with respect to the growth temperature. The nanorods are symmetrically tilted with an inclination angle of 628 between the substrate and the nanorods. The mirror axis is the c-direction of the compact GaN layer surrounding the roots of the nanocolumns. Methods for the control of the nanorod density and the suppression of one nanorod growth direction are presented. The results indicate a diffusion based growth mechanism. Transmission electron microscopy studies and high resolution X-ray diffraction (HRXRD) polar plots reveal the epitaxial relationship between substrate, compact GaN layer and nanorods. The nanorods grow in c-direction and the side facets are m-planes. Transmission electron microscopic and optical analysis of the nanorods reveal the good structural and optical properties, respectively. A full width at half maximum (FWHM) of 1.2 meV of the donor-bound exciton emission was measured for both the ensemble and single free-standing nanorods. Successful n-and Mg-doping of nanorods was verified by a strong increase of the micro-photoluminescence intensity of the respective donor-bound and acceptor-bound exciton emission peak in comparison to an undoped sample.The background shows a secondary electron microscope image (angle of 108 between sample surface and electron beam) of the nanorods. Superimposed to the SEM image, a typical microphotoluminescence spectrum of the excitonic emission of an ensemble at 25 K is presented. The donor-bound, acceptorbound and free exciton lines are labelled with D 0 X, A 0 X and FX, respectively.

show abstract

“…NRs by plasma-assisted molecular beam epitaxy ͑PAMBE͒ has been reported on different substrate materials, including Si ͑111͒, Si ͑001͒, or sapphire, 4,5 as well as on GaN or AlN wetting layers. [6][7][8] Ni nanoparticles have been used as catalysts and the growth of homogeneous NRs has been demonstrated and could be explained based on the vapor-liquidsolid ͑VLS͒ growth model.…”

Section: Introductionmentioning

confidence: 99%

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

Furtmayr

Vielemeyer

Stutzmann

et al. 2008

Journal of Applied Physics

142

151

View full text Add to dashboard Cite

The self-assembled growth of GaN nanorods on Si ͑111͒ substrates by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions is investigated. An amorphous silicon nitride layer is formed in the initial stage of growth that prevents the formation of a GaN wetting layer. The nucleation time was found to be strongly influenced by the substrate temperature and was more than 30 min for the applied growth conditions. The observed tapering and reduced length of silicon-doped nanorods is explained by enhanced nucleation on nonpolar facets and proves Ga-adatom diffusion on nanorod sidewalls as one contribution to the axial growth. The presence of Mg leads to an increased radial growth rate with a simultaneous decrease of the nanorod length and reduces the nucleation time for high Mg concentrations.

show abstract

Structure and photoluminescence properties of epitaxially oriented GaN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy

Cited by 93 publications

References 18 publications

Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

Catalyst free self‐organized grown high‐quality GaN nanorods

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

Contact Info

Product

Resources

About