2016
DOI: 10.1016/j.vacuum.2016.07.013
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Structure and properties of Al2O3 thin films deposited by ALD process

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Cited by 62 publications
(51 citation statements)
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“…The deposition temperature with this method can be achieved at temperatures from room temperature to 500 °C. High-resolution TEM (HRTEM) images and polarisation tests showed that the best quality films in terms of density and purity are obtained when prepared under higher temperatures of 300 °C, as shown in Figure 13a–c, respectively [83]. Alumina nanocoating over 316L stainless steel showed a better corrosion performance for coating prepared with ALD at 250 °C compared to the same materials prepared at 160 °C.…”
Section: Nanocoating and Its Role In Corrosion Preventionmentioning
confidence: 99%
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“…The deposition temperature with this method can be achieved at temperatures from room temperature to 500 °C. High-resolution TEM (HRTEM) images and polarisation tests showed that the best quality films in terms of density and purity are obtained when prepared under higher temperatures of 300 °C, as shown in Figure 13a–c, respectively [83]. Alumina nanocoating over 316L stainless steel showed a better corrosion performance for coating prepared with ALD at 250 °C compared to the same materials prepared at 160 °C.…”
Section: Nanocoating and Its Role In Corrosion Preventionmentioning
confidence: 99%
“…( a , b ) High-resolution (HRTEM) micrograph of the Al 2 O 3 layer deposited at 300 °C with corresponding SAED pattern; ( c ) Potentiodynamic polarisation curves of the Al 2 O 3 coating of different deposition temperatures tested in 1-M HCl solution [83]. …”
Section: Figurementioning
confidence: 99%
“…In the frame of microtechnologies, aluminium oxide (Al2O3) has been investigated for several applications: as a "high-k" material for MOS gate oxide [1,2], as an ion-sensitive and passivation layer for FET-based microsensors [3,4], as a passivation layer for OLED and solar cell devices [5,6], as a luminescent material for dosimeters [7],... As a consequence, many processes based on physical and/or chemical deposition techniques were developed in order to integrate alumina thin films with optimized properties into the corresponding fabrication processes: electron beam evaporation [8,9], pulsed laser deposition [10], sputtering [11], chemical vapour deposition [12], metal-organic chemical vapour deposition [13], plasma-enhanced chemical vapour deposition [14],... Among them, atomic layer deposition (ALD) was thoroughly studied for the conformal deposition of Al2O3 thin films [15][16][17], emphasizing the use of tri-methyl-aluminium Al(CH3)3 (also called TMA) as an aluminium source and water (H2O) as an oxidant source [18][19][20][21][22][23][24][25]. Nevertheless, other sources such aluminium trichloride (AlCl3) as well as dioxygen (O2) and ozone (O3), were also developed in parallel using plasma-enhanced atomic layer deposition (PE-ALD) in order to reduce the impurity content in the grown Al2O3 film and improve their dielectric properties [24][25][26][27][28].…”
Section: Introductionmentioning
confidence: 99%
“…In the different studies related to the ALD process [18][19][20][21][22][23][24][25][26][27][28], the presence of a steep interface was systematically assumed between the Al2O3 films and the silicon substrate, which allows simplifying the determination of the ALD growth rate per cycle as well as defining different growth types: linear, substrate-enhanced and substrate-inhibited [29]. This "steep interface" assumption seems obvious when considering the atomic layer deposition principles.…”
Section: Introductionmentioning
confidence: 99%
“…For Ga3d spectrum, there are two peaks located at 19.9 eV and 18.1 eV, the former Ga3d 5/2 peak ascribed to GaN [24], the latter Ga3d 5/2 peak ascribes to metal Ga [25]. O1s spectrum has 534.8 eV and 531.7 eV, which ascribe O1s to adsorbed O 2 and Al 2 O 3 , respectively [26,27]. Al 2p spectrum has a peak at 73.9 eV related to Al2p 3/2 in Al 2 O 3 [28][29][30].…”
Section: Surface Characterizationmentioning
confidence: 99%