Structure and properties of amorphous hydrogenated silicon carbide

Petrich, Mark A.; Gleason, Karen K.; Reimer, Jeffrey A.

doi:10.1103/physrevb.36.9722

Cited by 108 publications

(42 citation statements)

References 31 publications

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“…17 This may be because H is preferentially bonded to sp 3 instead of sp 2 sites of C, as suggested by the results obtained from nuclear magnetic resonance studies on plasma deposited carbon-hydrogen alloys. 18 The Raman spectra for the Si-rich a-Si 1Ϫx C x :H under visible excitation are shown in Fig. 2.…”

Section: Resultsmentioning

confidence: 99%

Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilution

Chew

Rusli

Yoon

et al. 2002

Journal of Applied Physics

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Articles you may be interested inOn the induced microstructure changes of the amorphous carbon nitride films during annealing Plasma enhanced metalorganic chemical vapor deposition of amorphous aluminum nitride Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor depositionWe have investigated the growth of a-Si 1Ϫx C x :H using the electron cyclotron resonance chemical vapor deposition ͑ECR-CVD͒ technique, under the conditions of high microwave power and strong hydrogen (H 2 ) dilution. The microwave power used is 900 W and a gas mixture of CH 4 and SiH 4 diluted in H 2 is varied to give carbon ͑C͒ fractions x ranging from 0 to 1. We aim to understand the effects of these deposition conditions on the characteristics of ECR-CVD grown a-Si 1Ϫx C x :H films at different x. Their microstructure and optical properties are investigated using infrared absorption, Raman scattering, UV-visible spectrophotometry, and photothermal deflection spectroscopy. Information on the atomic fraction x is obtained with Rutherford backscattering spectrometry. The B parameter in the Tauc relation is found to decrease and the Urbach energy E u increase with x, which are indicative of a higher degree of disorder with C incorporation. At intermediate x, the presence of SiuC bonds can be clearly seen from the IR absorption and Raman scattering results. The T peak around 1200 cm Ϫ1 is observed in the Raman spectra of the C-rich samples, with a redshift noted at increasing x. This suggests an increased presence of sp 3 CuC bonds in these films, which is attributed to the high microwave power and strong H 2 dilution that enhance C sp 3 bonding and indirectly limit the number of C sp 2 sites. This accounts for the large E 04 gaps of more than 3.2 eV observed in such films, which are nearly saturated at large x, instead of exhibiting a maximum at an intermediate x as are commonly reported. Blue photoluminescence ͑PL͒ is observed, and the PL peak energies (E PL ) are correlated to the E 04 gap. The full width at half maximum of the PL are also correlated to the Urbach energy E u . These results support that the PL broadening is attributed to the disorder broadening arising from the broad band tails.

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Section: Resultsmentioning

confidence: 99%

Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilution

Chew

Rusli

Yoon

et al. 2002

Journal of Applied Physics

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“…The result is in agreement with the behaviour in optical properties (energy gap and refractive index) and mass density as a function Several determinations of the ACH and AS,H constants between the oscillator density and the integrated IR absorption intensities of the CH, and SiH, vibrational modes have been performed (Brodsky, Cardona and Cuomo 1977, Freeman and Paul 1978, Fang et al 1980, Maley et al 1989, Langford et al 1992. Through nuclear magnetic resonance (NMR) measurements on a-Sil -,C,: H films deposited with different plasma techniques and having different carbon contents (Petrich, Gleason and Reimer 1987), i L was determined that the A S~H constant for a-Si : H films is also valid for a-Si 1 -%C, : H. There is no increase in the effective charge in a-Sil -xCx: H which would change the matrix elements of Si-H vibrations (Daey Ouwens et al 1993, Daey Ouwens 1994. By using for SiH, stretching modes at 2 0 0 0 -2 1 0 0~m -~ the average value of A S~H = 1.4 X I O2' cm ~ ' , we have calculated the density of hydrogen bonded to silicon present in films deposited from both C2H2 and CH4 plasmas.…”

Section: Infrared Spectroscopymentioning

confidence: 99%

Compositional and structural properties of hydrogenated amorphous silicon-carbon films prepared by ultra-high-vacuum plasma-enhanced chemical vapour deposition with different carbon sources

Demichelis

Giorgis

Pirri

et al. 1995

Philosophical Magazine A

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Hydrogenated amorphous siliconxarbon films were deposited by ultra-highvacuum plasma-enhanced chemical vapour deposition in silane + methane and silane + acetylene gas mixtures. Both types of film were compared with respect to their compositional, optical and structural properties. They have an optical gap in the range 2.3-3.3eV for [C]/[C + Si] between 0.2 and 0.1 and possess high uniformity. The deposition rate of CzHz-based films is 4-5As-', one order of magnitude higher than CH4-based films having large bandgap. By infrared (IR) spectroscopy, marked differences in carbon and hydrogen incorporation have been found for the films grown using the two different carbon sources. Analysis of the IR spectra reveals, among the most important structural characteristics, that the films grown from the S i b + C€& plasma have a higher concentration of SikC bonds than those grown from SiH4 + C2H2, and that CzH2-based alloys allow the formation of carbon clusters during the growth of the films. Considerations of the average coordination number, the chemical bonding and the degree of chemical order are also reported and discussed.

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“…In previous studies of plasma-deposited a-SiC:H from Sil4 and CH-1 4 , an increase in dangling bond density was usually observed with an increase in carbon content [5,7,12,13]. In previous studies of plasma-deposited a-SiC:H from Sil4 and CH-1 4 , an increase in dangling bond density was usually observed with an increase in carbon content [5,7,12,13].…”

Section: Resultsmentioning

confidence: 91%

Amorphous Hydrogenated Silicon Carbide Prepared from DC-Biased RF-Plasma-Enhanced Chemical Vapor Deposition

Lu¹,

Petrich²

1991

MRS Proc.

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We present evidence that an independently applied dc bias voltage has a significant effect on the plasma deposition of amorphous hydrogenated silicon carbide. Deposition rates increase with either positive or negative dc voltages applied to the powered rf electrode. The microstructure of the films (as determined by infrared absorption) can be reduced by increasing the plasma potential (positive dc bias voltages). Negative dc biases, or excessively high positive biases, result in increased amounts of film microstructure. Film carbon content is increased when positive biases are applied, but the optical band gaps decrease suggesting increased amounts of graphitic bonding configurations. Negative biases do not change the carbon content of the films, but do increase both deposition rate and microstructure.

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Structure and properties of amorphous hydrogenated silicon carbide

Cited by 108 publications

References 31 publications

Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilution

Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilution

Compositional and structural properties of hydrogenated amorphous silicon-carbon films prepared by ultra-high-vacuum plasma-enhanced chemical vapour deposition with different carbon sources

Amorphous Hydrogenated Silicon Carbide Prepared from DC-Biased RF-Plasma-Enhanced Chemical Vapor Deposition

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