1997
DOI: 10.1016/s0040-6090(96)09354-6
|View full text |Cite
|
Sign up to set email alerts
|

Structure and properties of sol-gel obtained SnO2 and SnO2-Pd films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
5

Citation Types

0
12
0

Year Published

2000
2000
2023
2023

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 32 publications
(12 citation statements)
references
References 3 publications
0
12
0
Order By: Relevance
“…Tin oxide (SnO 2 ), a ntype semiconductor with a wide band gap (3.6 eV, at 300 K), is well known for its potential applications in gas sensors, dye sensitized solar cells, and transparent conducting electrodes and as a catalyst support [3,4]. Therefore, many processes have been proposed to synthesize SnO 2 nanostructures; some involve dry processes such as sputtering from tin oxide target [5] or from metallic target followed by oxidation [6] and chemical vapour deposition (CVD) [7], while others are based on wet processes, including spray pyrolysis [8] and sol-gel-related methods which have been used to prepare tin oxide coating, particles, and precipitates [9][10][11][12][13][14][15].…”
Section: Introductionmentioning
confidence: 99%
“…Tin oxide (SnO 2 ), a ntype semiconductor with a wide band gap (3.6 eV, at 300 K), is well known for its potential applications in gas sensors, dye sensitized solar cells, and transparent conducting electrodes and as a catalyst support [3,4]. Therefore, many processes have been proposed to synthesize SnO 2 nanostructures; some involve dry processes such as sputtering from tin oxide target [5] or from metallic target followed by oxidation [6] and chemical vapour deposition (CVD) [7], while others are based on wet processes, including spray pyrolysis [8] and sol-gel-related methods which have been used to prepare tin oxide coating, particles, and precipitates [9][10][11][12][13][14][15].…”
Section: Introductionmentioning
confidence: 99%
“…15,16,20,21 Tin oxide-based materials have been prepared by many different techniques; some involve dry processes, such as sputtering from a tin oxide target 22,23 or from a metallic target followed by oxidation, 24 laser ablation 15 and chemical vapor deposition (CVD), 25 others are based on wet processes, including spray pyrolysis, [26][27][28] decomposition/oxidation of tin(II) amides 29 and sol-gel-related methods, which have been used to prepare tin oxide coatings, particles and precipitates. 4,6,[30][31][32][33][34][35][36][37][38][39][40][41][42] Among the different possible synthetic outcomes, stable sols of crystalline tin oxide nanoparticles are of interest for the preparation of antistatic coatings, 13 conductive coatings, 4 filtration membranes 4 and gas sensors. 29 Indeed, the sol state can be easily used for dip-or spin-coatings.…”
Section: Introductionmentioning
confidence: 99%
“…Metal oxide semiconductor based thin and thick films have been widely used in gas sensors. Such materials possess good chemisorption based affinity towards a wide range of gases like NH 3 , CH 4 , and H 2 S and Volatile Organic Compounds (VOC) with a detection ability up to a few ppm levels [1][2][3][4][5]. Among them, SnO 2 in particular has been studied extensively to monitor gas leakage in diverse real time applications.…”
Section: Introductionmentioning
confidence: 99%
“…Among them, SnO 2 in particular has been studied extensively to monitor gas leakage in diverse real time applications. The basic sensing principle behind metal oxide based thin or thick film is that there will be a change in the electrical resistance due to gas reacting with negatively charged oxygen that is adsorbed on the surface of the SnO 2 nanoparticles [2][3][4][5][6]. Mostly metal oxide gas sensors are rugged in nature and easy to use and the performance of these metal oxide sensing mechanisms is highly dependent on the operating temperature [7][8][9][10][11][12][13].…”
Section: Introductionmentioning
confidence: 99%