Structure and properties of the high and low pressure forms of SrIrO3

Longo, J.M.; Kafalas, J. A.; Arnott, R. J.

doi:10.1016/0022-4596(71)90022-3

Cited by 190 publications

(171 citation statements)

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“…Longo et al [15]. At high pressure (P = 40 kbar) and temperature (T = 1000 °C), it transforms into a distorted orthorhombic structure (a = 5.60 Å, b = 5.58 Å, c = 7.89 Å) of space group Pbnm (Fig.…”

Section: Crystal Structure Of Sriro3mentioning

confidence: 99%

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Growth and engineering of perovskite SrIrO 3 thin films

Biswas

Jeong

2017

Current Applied Physics

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Abstract5d transition-metal-based oxides display emergent phenomena due to the competition between the relevant energy scales of the correlation, bandwidth, and most importantly, the strong spinorbit coupling (SOC). Starting from the prediction of novel oxide topological insulators in bilayer ABO3 (B = 5d elements) thin-film grown along the (111) direction, 5d-based perovskites (Pv) form a new paradigm in the thin-film community. Here, we reviewed the scientific accomplishments in Pv-SrIrO3 thin films, a popular candidate material for observing non-trivial topological phenomena. Although the predicted topological phenomena are unknown, the Pv-SrIrO3 thin film shows many emergent properties due to the delicate interplay between its various degrees of freedom. These observations provide new physical insight and encourage further research on the design of new 5d-based heterostructures or superlattices for the observation of the hidden topological quantum phenomena in strong spin-orbit coupled oxides. b)

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Section: Crystal Structure Of Sriro3mentioning

confidence: 99%

“…1). Because SrIrO3 adopts cubic close packing with high density at high pressure, the structure transforms into an orthorhombic structure with an approximately 3% reduction in volume [15]. The pseudo-cubic unit cell of the distorted orthorhombic structure yields ≈ √2 � ≈ √2 � ≈ 2 � ≈ 3.96 Å.…”

Section: Crystal Structure Of Sriro3mentioning

confidence: 99%

Growth and engineering of perovskite SrIrO 3 thin films

Biswas

Jeong

2017

Current Applied Physics

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“…The larger distortion arises from the mismatch (∼ 0.9 %) between SIO (a = 3.94Å [30][31][32]) and STO (a = 3.905Å), the substrate material used in Ref. [20].…”

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confidence: 99%

Charge Transfer in Iridate-Manganite Superlattices

et al. 2017

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Charge transfer in superlattices consisting of SrIrO3 and SrMnO3 is investigated using density functional theory. Despite the nearly identical work function and non-polar interfaces between SrIrO3 and SrMnO3, rather large charge transfer was experimentally reported at the interface between them. Here, we report a microscopic model that captures the mechanism behind this phenomenon, providing a qualitative understanding of the experimental observation. This leads to unique strain dependence of such charge transfer in iridate-manganite superlattices. The predicted behavior is consistently verified by experiment with soft x-ray and optical spectroscopy. Our work thus demonstrates a new route to control electronic states in non-polar oxide heterostructures.Electron density is one of the most important parameters controlling electronic phases in strongly correlated electron systems. As a milestone in condensed matter physics, high critical temperature superconductivity was discovered in Cu-based oxides by doping carriers into Mott insulating states [1]. This triggered an improvement in crystal synthesis techniques, leading to the discovery of a number of novel spin, charge and orbital states in complex oxide materials [2]. Thin film growth techniques have also improved dramatically [3,4]. In Ref.[4], Ohtomo et al. demonstrated atomically sharp interfaces between two insulating titanates with a metallic behavior. Such metallic interfaces led to the concept of electronic reconstruction originally proposed for K-doped C 60 systems [5,6]. One of the important aspects of the electronic reconstruction is that the valence state of constituent ions in such heterostructures can significantly differ from the corresponding valence state in bulk systems as a result of the electron transfer within the heterostructures. Such electron transfer can be manipulated by the polar discontinuity [7] or by the difference in the work functions [8]. The polar discontinuity was previously discussed in the context of III-V semiconductor heterostructures [9]. In this case, the discontinuity often leads to the atomic reconstruction because it is significantly more challenging to change the valence state than for transition-metal elements.Thus, hetero-structuring is expected to become a fascinating route to explore novel electronic states in complex * Copyright notice: This manuscript has been authored by UTBattelle, LLC under Contract No. DE-AC05-00OR22725 with the U.S. Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a nonexclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (http://energy.gov/downloads/doe-public-access-plan) † okapon@ornl.gov systems ...

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“…It has been well known that bulk SrIrO 3 synthesized at ambient pressure crystallizes in the monoclinically distorted six-layered (6H) structure, and it can transform to the orthorhombic Pbnm perovskite structure under HPHT conditions [4]. This metastable perovskite phase is quenchable to ambient conditions.…”

Section: Resultsmentioning

confidence: 99%

“…In order to explain the insulating ground state of Sr 2 IrO 4 , Kim et al [1] proposed that the strong SOC splits the otherwise broad t 2g band of the octahedral-site, low-spin Ir 4+ (5d 5 ) array into a filled, low-energy J eff = 3/2 quartet band and a half-filled, high-energy J eff = 1/2 doublet band, which can open a Mott gap by a moderate on-site Hubbard U, leading to a novel SOC-driven Mott insulating state. Moon et al [3] further demonstrated that a bandwidth controlled insulator-to-metal transition can be realized in the Ruddlesden-Popper series Sr n+1 Ir n O 3n+1 (n = 1, 2, ) with increasing the number of perovskite layer n. In contrast to the former two compounds, Sr 2 IrO 4 (n = 1) and Sr 3 Ir 2 O 7 (n = 2), which are magnetic insulators, less attention has been paid to the SrIrO 3 (n = ) perovskite, presumably due to the fact that the bulk sample can only be stabilized under high-pressure and high-temperature conditions [4]. The available experimental results suggested that the SrIrO 3 perovskite is a bad metal approaching the boundary of metal-to-insulator transition as manifested by the low-temperature upturn in resistivity [5].…”

Section: Introductionmentioning

confidence: 99%

Weak Ferromagnetism in the Orthorhombic Perovskite SrIr_0.8Sn_0.2O₃

Cheng¹,

Zhou²,

Goodenough³

et al. 2014

Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2013)

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We present a comparative study on the structure, resistivity, and magnetic properties of a SrIrO 3 and a 20% Sn-doped SrIr 0.8 Sn 0.2 O 3 perovskite both stabilized under high-pressure and high-temperature conditions. We found that the substitution of isovalent, nonmagnetic Sn 4+ for Ir 4+ ions converts the ground state from a paramagnetic metal for SrIrO 3 to a weak ferromagnetic insulator with high transition temperature T c = 280 K for SrIr 0.8 Sn 0.2 O 3 . For the later compound, a temperature-driven conductor-to-insulator transition at T c clearly evidenced a band gap opening associated with the spin ordering.

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Structure and properties of the high and low pressure forms of SrIrO3

Cited by 190 publications

References 11 publications

Growth and engineering of perovskite SrIrO 3 thin films

Growth and engineering of perovskite SrIrO 3 thin films

Charge Transfer in Iridate-Manganite Superlattices

Weak Ferromagnetism in the Orthorhombic Perovskite SrIr_0.8Sn_0.2O₃

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Structure and properties of the high and low pressure forms of SrIrO3

Cited by 190 publications

References 11 publications

Growth and engineering of perovskite SrIrO 3 thin films

Growth and engineering of perovskite SrIrO 3 thin films

Charge Transfer in Iridate-Manganite Superlattices

Weak Ferromagnetism in the Orthorhombic Perovskite SrIr0.8Sn0.2O3

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Weak Ferromagnetism in the Orthorhombic Perovskite SrIr_0.8Sn_0.2O₃