Structure and properties of ZnSe nanocomposite thin films

Валеев, Р. Г.; Krylov, P. N.; Романов, Э. А.

doi:10.1134/s1027451007010065

Cited by 11 publications

(2 citation statements)

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“…3.). This shift may be related to the smaller atomic radius (1.09 Å) of the S atom than the atomic radius (1.22 Å) of the Se atom [24,25]. The interplaner spacing dhkl for these thin films were calculated from Bragg's law [26] 2 sin…”

Section: X-ray Diffraction Analysis Of Cdse1-xsx Thin Filmsmentioning

confidence: 99%

Characterization of Thermally Evaporated CdSe1-XSX Thin Films for Solar Cells Applications

Abdelrahman

2018

JAP

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Binary semiconductor CdSe and CdS thin films are widely used for optoelectronic devices and window materials. The formation of ternary CdSe1-xSx thin films improves the physical characteristics of the binary CdSe thin films. The importance of CdSe1-xSx thin film is the change of band gap when incorporating S into the CdSe. This change in energy gap recommends CdSe1-xSx thin film for photovoltaic and photoconductive cells applications. In this work, polycrystalline CdSe1-xSx thin films have been grown in terms of thermal evaporation technique. X-ray diffractometry has been used to determine the lattice parameters and the crystallite size of the CdSe1-xSx mixed crystals. The variation in lattice parameters with composition from x = 0 to x = 1 were linearly. The crystallite size varies parabolically with the change in composition. The energy gap, opt g E , values of CdSe1-xSx thin films were estimated in terms of first derivative of absorbance with respect to wavelength and found to be increased with the formation of the ternary compound Cd-Se-S and with increasing the S content as expense of Se. This wider energy gap of the prepared films, which permits extra light to reach the solar cell junction, was correlated with the change in the microstructure parameters of thin films.

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Section: X-ray Diffraction Analysis Of Cdse1-xsx Thin Filmsmentioning

confidence: 99%

Characterization of Thermally Evaporated CdSe1-XSX Thin Films for Solar Cells Applications

Abdelrahman

2018

JAP

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“…Zinc selenide layer was deposited onto the surface of porous film at the temperature of 150 °C, by a thermal evaporation of bulk ZnSe in high (10 -5 Pa) vacuum [10]. For further analysis by the SEM, the sample was fixed on a carbon tape and the matrix was selectively dissolved in 5 % H 3 PO 4 .…”

Section: Experimental 21 Sample Preparationmentioning

confidence: 99%

Synthesis of ZnSe semiconductor nanodot arrays by templated PVD

Валеев

Романов

Deev

et al. 2010

Phys. Status Solidi (c)

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Here we report a novel approach for preparation of ZnSe nanodot arrays by physical vapor deposition on porous aluminum oxide templates possessing ordered system of channels. The structure of nanodot arrays was investigated by scanning electron microscopy and EXAFS‐spectroscopy. The geometry of nanodots and local atomic structure parameters like the interatomic distances and coordination numbers of Zn and Se atoms are reported. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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