Structure and purity of epitaxially grown nickel films on NaCl

2014 On a discuté de la préparation des films a-Si hydrogéné, obtenus par pulvérisation r.f. et pouvant conduire à des cellules solaires de grandes dimensions. On a détaillé la mesure optique et électrique sur de pareils matériaux en rapport avec une diversité de métaux. On a décrit des éléments prototypes et expérimentaux ayant des dimensions jusqu'à 1 cm2 et des efficacités de 2 % environ. Abstract. 2014 The preparation of hydrogenated, r.f. sputtered a-Si films, suitable for large area solar cell arrays is discussed. Optical and electrical measurements on such materials contacted with a variety of metals are detailed. Initial experimental prototype cells, with areas up to 1 cm2 and efficiencies of around 2 %, are described.

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R.F. sputtered amorphous silicon schottky Barrier solar cells

Thompson

Allison

Alkaisi

et al. 1978

Rev. Phys. Appl. (Paris)

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Surface state and surface anisotropy in SWR in single-crystal nickel films

Whiting

1982

IEEE Trans. Magn.

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Epitaxial Growth of Ni on Si by Ion Beam Assisted Deposition

1988

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Epitaxial Ni films were grown on Si(111) substrates to a thickness of about 500 nm by ion beam assisted deposition at room temperature. The films were grown using 25-keV-Ni ions and electron-beam evaporation of Ni at a relative arrival ratio of one ion for every 100 Ni vapor atoms. The ion beam and evaporant flux were both incident at 45° to the sample surface. Standard θ-2θ X-ray diffraction scans revealed the extent of crystallographic texture, while Ni {220} pole figure measurements identified the azimuthal orientation of Ni in the plane of the film. Films grown without the ion beam consisted of nearly randomly oriented fine grains of Ni whereas with bombardment the Ni (111) plane was found parallel to the Si (111) plane. In all the epitaxial cases the Ni [110] direction was perpendicular to the axis of the ion beam, suggesting that the azimuthal orientation of the film was determined by channeling of the ion beam down {110} planar channels in the Ni film. Additional experiments with different ions, energies, and substrates revealed their influence on the degree of epitaxy obtained.

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Structure and purity of epitaxially grown nickel films on NaCl

Cited by 3 publications

References 8 publications

R.F. sputtered amorphous silicon schottky Barrier solar cells

R.F. sputtered amorphous silicon schottky Barrier solar cells

Surface state and surface anisotropy in SWR in single-crystal nickel films

Epitaxial Growth of Ni on Si by Ion Beam Assisted Deposition

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