2007
DOI: 10.1002/pssc.200775421
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Structure and relaxation effects in thin semiconducting films and quantum dots

Abstract: InP(001) substrate and free-standing CdSe quantum dots on a ZnSe(001) surface. For the first system the influence of surface-oxidation on the relaxation behavior of the entire film was investigated by a comparison of capped and uncapped samples. We found that the critical thickness for pseudomorphic growth is more than doubled by the protective capping layers. For the second system under investigation a determination of the size and shape of the quantum dots was performed. They have a cylindrical shape with an… Show more

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Cited by 5 publications
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“…15 The films were subsequently covered in situ by a 10 nm thick magnetron sputtered metal cap to avoid oxidation and surface relaxation. 28 The Mn content was controlled during growth via the temperature, and hence the flux, of the Mn effusion cell. Six different samples (see table I) were grown with increasing Mn concentration, sample 1 having the lowest and sample 6 the highest concentration of Mn.…”
Section: A Thin Film Growthmentioning
confidence: 99%
“…15 The films were subsequently covered in situ by a 10 nm thick magnetron sputtered metal cap to avoid oxidation and surface relaxation. 28 The Mn content was controlled during growth via the temperature, and hence the flux, of the Mn effusion cell. Six different samples (see table I) were grown with increasing Mn concentration, sample 1 having the lowest and sample 6 the highest concentration of Mn.…”
Section: A Thin Film Growthmentioning
confidence: 99%