Structure and Room-Temperature Ferromagnetism of Zn-Doped SnO<sub>2</sub> Nanorods Prepared by Solvothermal Method

Liu, Xiaofang; Iqbal, Javed; Wu, Zhao; He, Bo; Yu, Ruozhou

doi:10.1021/jp909178x

Cited by 132 publications

(63 citation statements)

References 37 publications

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“…The optimized lattice parameters are a = b = 4.74 Å and c = 3.19 Å , which are consistent with the experimental values [22][23][24]. The states Sn 5s 2 5p 2 , O 2s 2 2p 4 , N 2s 2 2p 3 , and Bi 6s 2 6p 3 were treated as valences states.…”

Section: Computational Detailssupporting

confidence: 81%

Electronic structure and optical properties of Bi,N co-doped SnO2

Feng

Huang

et al. 2015

J Mater Sci

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The geometry, electronic structure, and optical properties of Bi and N co-doped SnO 2 are investigated by first-principles calculations. The calculated results show that the N and Bi atoms can be introduced to intrinsic SnO 2 with reasonable formation energy (8.95-9.61 eV/cell) at different sites. Interestingly, the BiSn 15 O 31 N presents the character of indirect gap semiconductor with n-type conductivity. Increasing the doping concentration of N or Bi, BiSn 15 O 32-x N x (x = 2,3) behaves like a hole-rich semiconductor, while Bi y Sn 16-y O 31 N (y = 2,3) possesses the characteristic of metal. Moreover, the band gap of doped structures becomes smaller than intrinsic SnO 2 due to the emergence of energy bands contributing from doping elements near the Fermi level. The absorption intensity is enhanced in UV region, and the optical absorption edge shows red-shift phenomenon for all the doped systems. Our results on Bi,N co-doped SnO 2 display the improved capacity of absorption and broadened absorption region. These findings can be utilized in light sensor and solar cell.

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Section: Computational Detailssupporting

confidence: 81%

Electronic structure and optical properties of Bi,N co-doped SnO2

Feng

Huang

et al. 2015

J Mater Sci

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“…Very recently, unexpected RT ferromagnetism has been theoretically predicted in a series of non-magneticelement doped SnO 2 [19,20]. At the same time, RT ferromagnetism was observed in Zn-doped SnO 2 nanorods prepared by a solvothermal method [21]. From these previous reports, it appears that ferromagnetism in DMSs can be designed by doping with non-magnetic elements.…”

mentioning

confidence: 89%

First‐principles study of magnetic properties in Ag‐doped SnO₂

Xiao

Wang

et al. 2011

Physica Status Solidi (b)

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The electronic structures and magnetic properties of Ag-doped SnO 2 have been investigated using first-principles spinpolarized calculations based on density functional theory. Our results demonstrate that Ag doping introduces spin polarization in SnO 2 and gives rise to a local magnetic moment of 1.0 m B per substitutional silver ion. The hole-mediated ferromagnetic (FM) coupling between two Ag ions in this material is possibly ascribed to a p-d hopping interaction between O and Ag ions. The oxygen vacancy (V O ) plays an important role in determining the magnetic properties of the Ag-doped SnO 2 system. It is found that the V O does not induce magnetism in bulk SnO 2 . The V O enhances stability of the spin-polarized state for the case of the single-Ag-doped system, and imposes an intricate effect on a pair of Ag-doped configurations. For example, the FM coupling between two Ag ions is possibly reinforced if V O is sufficiently far away from them. The result indicates that Ag-doped SnO 2 is a promising candidate for applications in future spintronic devices. [6] initially reported that ferromagnetism with a Curie temperature (T C ) close to 650 K and with a giant magnetic moment (about 7.5 AE 0.5 m B /Co) was discovered in a Codoped SnO 2 film. Then followed great efforts devoted to search for RT TM-doped SnO 2 -based DMSs which have attracted considerable attention owing to their potential applications in spintronics [7]. This was followed by a surge of studies that reported RT ferromagnetism in SnO 2 doped with Fe, Mn, Cr, V, Ni,. Despite considerable efforts aimed at elucidating the origin of ferromagnetism in TM-doped SnO 2 , the mechanism is still under active debate [11,15,16]. Indeed, there are still some outstanding issues. For instance, a consensus on the influence of the native defect V O on the ferromagnetism in TM-doped SnO 2 has not yet

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“…Although, the contribution from cation vacancy (V Sn ) defects can not be discarded completely that can also induce FM in such oxides. In our work, due to high formation energy, it is expected that the concentration of V Sn should be much below the required percolation threshold to mediate long range ferromagnetic ordering in pristine SnO 2 NWs [17]. We also have not traced any presence of V Sn defects, hence we believe that the V O + defect clusters are responsible for the FM ordering in pure SnO 2 NWs.…”

Section: Origin Of Ferromagnetism In Sno 2 Nwsmentioning

confidence: 76%

d⁰Ferromagnetism in Oxide Nanowires: Role of Intrinsic Defects

Ghosh

Khan

Mandal

2013

EPJ Web of Conferences

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Abstract. In this report, we have investigated the origin of defect-induced room-temperature d 0 ferromagnetism in pure SnO 2 and ZnO nanowires (NWs) with average diameter ~ 50 nm, prepared by template assisted route. Photoluminescence (PL) and electron paramagnetic resonance (EPR) spectroscopic measurements show the singly ionized oxygen vacancy is inducing ferromagnetism in pure SnO 2 NWs whereas cation (Zn) vacancy is found to responsible for the ferromagnetic behaviour in pure ZnO NWs. Besides, it is found that the Zn vacancy-induced ferromagnetism in ZnO can be tuned by substituting few percentage of nonmagnetic alkali metal like potassium (K) at Zn site. Saturation moment as well as Curie temperature has found to increase significantly with K-doping up to 4 at.% but a decrease of ferromagnetic response is observed for higher K-doping. X-ray photoelectron spectra show that K +1 ions substitute at Zn site and thus introduce hole through which a ferromagnetic interaction between Zn vacancies can be mediated. The direct correlation between the Zn vacancy concentration and the corresponding saturation moment indicates that Zn vacancyinduced ferromagnetism in ZnO can be successfully tuned by K-doping that can an exciting approach to prepare ZnO-based dilute magnetic semiconductors for modern spintronic technology.

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Structure and Room-Temperature Ferromagnetism of Zn-Doped SnO₂ Nanorods Prepared by Solvothermal Method

Cited by 132 publications

References 37 publications

Electronic structure and optical properties of Bi,N co-doped SnO2

Electronic structure and optical properties of Bi,N co-doped SnO2

First‐principles study of magnetic properties in Ag‐doped SnO₂

d⁰Ferromagnetism in Oxide Nanowires: Role of Intrinsic Defects

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Structure and Room-Temperature Ferromagnetism of Zn-Doped SnO2 Nanorods Prepared by Solvothermal Method

Cited by 132 publications

References 37 publications

Electronic structure and optical properties of Bi,N co-doped SnO2

Electronic structure and optical properties of Bi,N co-doped SnO2

First‐principles study of magnetic properties in Ag‐doped SnO2

d0Ferromagnetism in Oxide Nanowires: Role of Intrinsic Defects

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Product

Resources

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Structure and Room-Temperature Ferromagnetism of Zn-Doped SnO₂ Nanorods Prepared by Solvothermal Method

First‐principles study of magnetic properties in Ag‐doped SnO₂

d⁰Ferromagnetism in Oxide Nanowires: Role of Intrinsic Defects