Structure and Some Physical Properties of Chemically Deposited Nickel Sulfide Thin Films

Hammad, Ahmed H.; Elmandouh, Zeinab S.; Elmeleegi, H.A.

doi:10.12693/aphyspola.127.901

Cited by 14 publications

(7 citation statements)

References 12 publications

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“…The linear extrapolation of the curve yields the intersection point with the abscissa axis, which corresponds to the energy of the optical transition. The optical band gap of the film was found to be 1.03 eV, in a good agreement with the values reported in the literature [22].…”

Section: Optical Propertiessupporting

confidence: 90%

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Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

Gahtar

Benramache

Ammari

et al. 2021

Annals of West University of Timisoara - Physics

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Nickel sulfide (NiS) thin film has been deposited on glass substrates by spray-pyrolysis at 325 ± 5 °C. The precursor aqueous solution was synthetized using hexahydrated nickel nitrates and thiourea. The structural, morphological, optical and electrical properties were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy and four probes electrical measurements. The XRD analysis confirmed the hexagonal structure of NiS thin film, which was found to crystalize along [010] direction with an average crystallites size of 10.5 nm. The lattice parameters are a = b = 3.420 Å and c = 5.300 Å in the space group P63/mmc. The optical properties of the films were investigated through the transmittance and the reflectance measurements. The results revealed that the material exhibits a direct optical band gap of 1.03 eV. The elementary composition analysis confirmed the presence of Ni and S with a stoichiometry ratio (Ni/S) of 1.05. The morphology analysis revealed a homogenous crack-free, compact appearance and a granular surface in all scanned areas. The average roughness of the surface was 6.48 nm. On the other hand, the film exhibits a high electrical conductivity ca. 1.10 × 105 S/cm at room temperature. The above results show that the prepared NiS in this study has a good crystallization, dense morphology, good stoichiometric ratio and high conductivity; therefore, it stands as a potential candidate for application in supercapacitors as an electrode material.

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Section: Optical Propertiessupporting

confidence: 90%

“…3 shows the variation of the absorption coefficient (α) as a function of wavelength (λ). The average absorption coefficient is 4.12×10 4 cm -1 , which is of the same order of magnitude observed in semiconducting reflecting thin films and it is close to those reported in the literature for semiconducting thin films [22].…”

Section: Optical Propertiessupporting

confidence: 88%

Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

Gahtar

Benramache

Ammari

et al. 2021

Annals of West University of Timisoara - Physics

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“…Moreover, the absorption coefficient values are close to the values of the literature [27]. The average value of absorption coefficient (〈𝛿〉> 10 4 cm −1 ) for the films also supports the direct band gap nature of the film [27]. The films under study have an absorption coefficient (α) obeying the below relation for energies of high photon (hν) [28]: αhν = B(hν − E g ) p (13) where: B is a constant; p is an integer which takes the value of 1/2 or 2 for the direct or indirect transitions, respectively.…”

Section: Optical Propertiessupporting

confidence: 86%

“…This decrease can be correlated with improved crystal growth in NiS films by increasing annealing time, removal of defects and reduction in the number of grain boundaries. Moreover, the absorption coefficient values are close to the values of the literature [27]. The average value of absorption coefficient (〈𝛿〉> 10 4 cm −1 ) for the films also supports the direct band gap nature of the film [27].…”

Section: Optical Propertiessupporting

confidence: 83%

Effect of annealing time on the structural, morphological, optical and electrical properties of NiS thin films

Gahtar¹,

Benali²,

Benramache³

et al. 2022

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In this work, we prepared thin films of nickel sulfide by spray pyrolysis on substrates of the glass at temperature of 300°C. The solution used is a mixture of nickel acetate and thiourea as a source of nickel and sulfur respectively, acetic acid was used as a complexing agent, and then heated the resulting layers in an ordinary furnace at 300°C at different times of 1h, 2h and 3h to study the annealing time effect on the physical and chemical properties. The characterization methods used indicate remarkable changes in the structural, electrical, morphological and optical properties of NiS films under annealing time. The results obtained have shown that the prepared NiS films contain good crystallization, dense morphology, good stochiometric ratio and high conductivity, and these specifications make them a potential candidate as electrode material for application in super-capacitors.

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“…[34]. Indeed, much reviews and literature, which describes the chemical bath deposition for both chalcogenide and oxide films, are found elsewhere [34][35][36].…”

Section: Chemical Bath Deposition Techniquementioning

confidence: 99%

Advance Deposition Techniques for Thin Film and Coating

Jilani¹,

Abdel-wahab²,

HosnyHammad³

2017

Modern Technologies for Creating the Thin-Film Systems and Coatings

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Thin films have a great impact on the modern era of technology. Thin films are considered as backbone for advanced applications in the various fields such as optical devices, environmental applications, telecommunications devices, energy storage devices, and so on . The crucial issue for all applications of thin films depends on their morphology and the stability. The morphology of the thin films strongly hinges on deposition techniques. Thin films can be deposited by the physical and chemical routes. In this chapter, we discuss some advance techniques and principles of thin-film depositions. The vacuum thermal evaporation technique, electron beam evaporation, pulsed-layer deposition, direct current/radio frequency magnetron sputtering, and chemical route deposition systems will be discussed in detail.

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Structure and Some Physical Properties of Chemically Deposited Nickel Sulfide Thin Films

Cited by 14 publications

References 12 publications

Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors

Effect of annealing time on the structural, morphological, optical and electrical properties of NiS thin films

Advance Deposition Techniques for Thin Film and Coating

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