Structure and the emission and piezoelectric properties of MOCVD-grown ZnS, ZnS-ZnO, and ZnO films

The effect of small addition of copper on the growth process, structure, surface charge and adsorption properties of ZnO films in the pyrolysis of dithiocarbamates

“…Thin (0.35-0.65 mm) ZnO-ZnS films, including those with the addition of Cu, were obtained by spraying a 0.1 M solution of Zn(DTC) 2 in pyridine onto heated (up to 220-260 1C) glass substrates C-48 and Si (111) with native oxide in a quasi-closed volume 70,71 in an air atmosphere. A quasi-closed volume is created by a quartz cylinder with a diameter of 102 mm and a height of 80 mm, which limits the reaction zone, providing a certain vapor pressure of the incoming precursor and free removal of reaction products (Fig.…”

Structural, optical, XPS and magnetic properties of Zn particles capped by ZnO nanoparticles

“…ZnO has attracted increasingly worldwide attention in the past few decades due to its unique properties and a large number of potential applications such as transparent conductive contacts [1], dye-sensitized photoelectrochemical solar cells [2], ZnO/Cu 2 O solar cell heterojunctions [3][4][5], laser diodes [6], ultraviolet lasers [7], thin film transistors [8], gas sensors [9], optoelectronic and piezoelectric applications to surface acoustic wave devices [10], and so on. Zinc oxide (ZnO) is a material usually characterized by its wide band gap of 3.37 eV at room temperature.…”

Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at the ZnS/Si interface

“…The composition of zinc oxide and zinc sulphide films obtained by sputtering on a heated substrate of zinc diethyldithiocarbamate (DDC-Zn) at the atmospheric pressure depends on the degree of precursor purification, the substrate temperature (with an increase from ZnS up to ZnO), the deposition rate (with an increase from ZnO to ZnS) and annealing at 600 °С (transform into ZnO) [12]. In ZnS films with the most perfect crystal structure, obtained from a precursor with the maximum degree of purification, the intense edge luminescence (3.64 eV) was first observed at room temperature.…”