Structure and Thermal Behaviour of Dichlorobis(thiourea)cadmium(II), a Single-Source Precursor for CdS Thin Films.

Krunks, Malle; Madarász, János; Hiltunen, Lassi; Mannonen, R.; Mellikov, E.; Niinistö, Lauri

doi:10.3891/acta.chem.scand.51-0294

Cited by 69 publications

(28 citation statements)

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“…The single molecule precursor is formed by reacting the parent compounds directly in the sprayed solution. [43] a tetrahedrally coordinated cadmium complex [44] with quite complex thermal behavior in air and under the conditions of spray pyrolysis, [45] from which they concluded that it is not possible to produce CdS thin films without significant amounts of chlorine and other impurities. A similar approach has been used by Liu and Wang [46] for preparing thin films of CdSe by spray pyrolysis of an aqueous solution of cadmium chloride and N,N-dimethylselenourea.…”

Section: From Chalcogeno-urea Complexesmentioning

confidence: 99%

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Gleizes

2000

Chem. Vap. Deposition

129

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The single-source approach to processing materials as thin films by metal±organic chemical vapor deposition (MOCVD) started with pioneering works in the late 1970s and early 1980s, and has developed considerably during the late 1980s and the 1990s. The literature contains some review and feature articles dedicated to its application to various types of materials, the most recent ones appearing in the mid 1990s. The present review aims at putting together results obtained for very different materials so as to obtain a comparative view of the different approaches. Faced with the considerable amount of data accumulated over more than twenty years, the scope of this article will be deliberately and arbitrarily limited to those compounds mentioned in the title. Materials consisting of elements from the second row of the periodic table, or binary combinations including one element from the second row, will not be considered here. This article will refer to precursors that have actually been used in MOCVD processes, rather than potential MOCVD sources.

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Section: From Chalcogeno-urea Complexesmentioning

confidence: 99%

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Gleizes

2000

Chem. Vap. Deposition

129

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“…To get a deeper insight into the thermal processes of decompositions, various methods of evolved gas analysis (EGA) of the precursors are also advantageous [12][13][14][15][16][17][18][19][20][21][22]. As spray pyrolysis precursors, various thiourea-metal complexes of Cd, Zn, Sn(II) and pure thiourea itself have recently Evolved gas analysis (EGA) Mass spectrometry (MS) FTIR spectroscopic gas cell Simultaneous thermogravimetry (TG) and differential thermal analysis (DTA) Titania precursor Titanium(IV)-isopropoxide Thiourea Anatase A B S T R A C T Decomposition of an amorphous precursor for S-doped titania (TiO 2 ) nanopowders, prepared by controlled sol-gel hydrolysis-condensation of titanium(IV) tetraisopropoxide and thiourea in aqueous isopropanol, has been studied up to 800 8C in flowing air by simultaneous thermogravimetric and differential thermal analysis coupled online with quadrupole mass spectrometer (TG/DTA-MS) and FTIR spectrometric gas cell (TG-FTIR) for analysis of gases and their evolution dynamics (by evolved gas analysis, EGA) in order to explore and model thermal annealing processes of fabrication techniques leading to S:TiO 2 photocatalysts with photocatalytic activities under visible light.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive evolved gas analysis of amorphous precursors for S-doped titania by in situ TG–FTIR and TG/DTA–MS

Madarász

Brăileanu

Pokol

2008

Journal of Analytical and Applied Pyrolysis

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“…Semenov et al [13] has found that the mixing of typical for spray of CdS initial solutions of CdCl 2 and thiourea (SC(NH 2 ) 2 ) in the ratio 1:1 leads to the formation of complex compound Cd(SCN 2 H 4 )Cl 2 ·H 2 O and to the formation of complex compound Cd(SCN 2 H 4 ) 2 Cl 2 from the initial solutions of CdCl 2 and thiourea (1:2). Our results gave the [N],wt% evidence of the formation of Cd(SCN 2 H 4 ) 2 Cl 2 independence of ratio of CdCl 2 and thiourea in initial solutions [7,14]. The following decomposition of formed complexes is very complicated stepwise process and proceeds in forming of the solid thin film and different solid mediates and gaseous products.…”

Section: Chemical Composition Of Sprayed Cds and Zns Filmsmentioning

confidence: 66%

“…The our results of chemical analysis and earlier literature results could be explained by the presence of thermal decomposition products of complexes formed already in initial solutions. The structure and composition of these complex compounds have been studied in the literature by different authors [7,13,14]. Semenov et al [13] has found that the mixing of typical for spray of CdS initial solutions of CdCl 2 and thiourea (SC(NH 2 ) 2 ) in the ratio 1:1 leads to the formation of complex compound Cd(SCN 2 H 4 )Cl 2 ·H 2 O and to the formation of complex compound Cd(SCN 2 H 4 ) 2 Cl 2 from the initial solutions of CdCl 2 and thiourea (1:2).…”

Section: Chemical Composition Of Sprayed Cds and Zns Filmsmentioning

confidence: 99%

Chemical Purity of Chemically Sprayed Thin Films

Bijakina

Krunks

Mellikov

2000

Interface Controlled Materials

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The influence of different experimental parameters to the chemical purity of thin films prepared by chemical spray process is studied. It is shown that the sprayed A 2 B 6 and CuInS 2 thin films contain different solid decomposition products in concentrations that depends on the substrate temperature and ratio of components in the initial solutions. IntroductionThe conversion of sunlight directly into electricity using the photovoltaic properties of materials is the most elegant alternative energy conversion process due to the immense solar energy resource. The limitations of solar energy practical use are high price of produced electricity due to the highly dispersed character of solar radiation, low efficiency and high price of solar cells materials and technologies. Therefore, research into photovoltaic alternatives is imperative to make the technology competitive. This includes the development of low-cost techniques, higher efficiency thin films cells that require less material. Spray pyrolysis method is a widely used process to produce large-area metal oxide and chalcogenide thin films and it seems attractive for depositing low cost films of ternary compounds, too. Large number of investigations are connected with sprayed ZnO, CIS and A 2 B 6 thin films for different applications [1][2][3][4][5][6][7][8][9][10][11] in which the dependence of film properties on the technological parameters has been studied. It is shown that the spray pyrolysis is very suitable to prepare metal oxide thin films due to no need for the use of inert atmospheres [1-3]. The influence of experimental parameters as growth temperature and doping with dopants is investigated with the goal to obtain thin metal oxide films with high optical transparency and electrical conductivity. The effect of the growth temperature on the structure of CIS type films prepared by spray pyrolysis is studied in papers [4][5][6]. The film growth temperature in the range of 300 -400 °C is usually used to deposit the films. It is shown, that the composition of the starting solution (Cu/In and S/Cu) has a strong effect to the composition and structure as well as on the properties of sprayed films [4][5] and that Cu/In ratio is higher in the films than that in starting solution, especially at growth temperatures higher than 400 °C [6]. Copper-rich solutions lead to highly textured films whereas crystal growth in the film is accelerated by presence of copper containing phases which segregate on the surface of the film [4][5]. At the same time there is no studies dealing with the effect of the composition of starting solutions and the spraying process parameters on the impurity concentration and chemical composition of the different films. This paper has the aim to represent our results in this field.Interface Controlled Materials. Edited by M. Rühle and H. Gleiter

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Structure and Thermal Behaviour of Dichlorobis(thiourea)cadmium(II), a Single-Source Precursor for CdS Thin Films.

Cited by 69 publications

References 0 publications

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Comprehensive evolved gas analysis of amorphous precursors for S-doped titania by in situ TG–FTIR and TG/DTA–MS

Chemical Purity of Chemically Sprayed Thin Films

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