Bipolar junction transistor or BJT is supposed to cost much more power and areas than MOSFET, but its frequency domain response seems better than MOSFETs. In this paper, a new circuit model for BJT is proposed, and the three-terminal circuit includes two MOSFETs and one Schottky diode, which can then be denoted by one MOSFET and a reversely-biased diode. If the new circuits are applied in technology processes for manufacturing, then MOS technology may be illuminated by early BJT to fabricate new devices.