Structure, Composition, Dielectric, and AC Conduction Studies on Tin Selenide Films

Suguna, P.; Mangalaraj, D.; Narayandass, Sa. K.; Meena, P.

doi:10.1002/pssa.2211550214

Cited by 43 publications

(14 citation statements)

References 18 publications

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“…As a result, the carriers become trapped or replaced at the electrodes, resulting in space charge and macroscopic field distortion. This space charge layer should lead to a substantial increase in capacitance [12][13][14].…”

Section: 5mentioning

confidence: 99%

Thin films of In2O3/SiO for Humidity Sensing Applications

Arshak

Twomey

2002

Sensors

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This paper documents the manufacture and testing of a humidity sensor based on a combination of In 2 O 3 /SiO. A number of different sensor samples have been produced by thermal deposition and the effect of varying the vacuum pressure has also been investigated. The AC and DC conduction mechanisms have been investigated. From the AC conduction studies, the tunneling conduction mechanism has been observed at low frequencies and the hopping conduction mechanism, for the majority of sensor samples, has been observed at high frequencies. The DC conduction mechanisms have indicated the possibility of spacecharge-limited conduction. The sensor with the highest humidity sensitivity of 1.145%/RH% is 85%In 2 O 3 /15%SiO, which is produced at a vacuum pressure of 2×10 -4 mbar.From the point of view of temperature stability, the 55%In 2 O 3 /45%SiO samples produced at a vacuum pressure of 2×10 -4 mbar exhibit the lowest temperature sensitivity, 0.3%/ o C.

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Section: 5mentioning

confidence: 99%

Thin films of In2O3/SiO for Humidity Sensing Applications

Arshak

Twomey

2002

Sensors

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“…The electrical resistance of SnSe semiconducting single crystals is pressure dependent [7]. Preparation of SnSe thin films was reported from various experimental techniques [8][9][10][11][12][13]. Ana Cláudia Bernardes-Silva et al [14] have reported that the phase change of SnSe bulk material occurs due to annealing.…”

Section: Introductionmentioning

confidence: 99%

Effects of Annealing on Thermally Evaporated SnSe Thin Films

Indirajith¹,

Rajalakshmi²,

Ramamurthi³

2011

Ferroelectrics

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SnSe alloy in alkaline medium was synthesized at 100 • C using SnCl 2 .2H 2 O and selenium as source materials. The powder X-ray diffraction patterns recorded for synthesized product confirmed the formation of nanocrystalline SnSe material. The synthesized SnSe was made as pellets and used as the source materials for the deposition of SnSe thin films on the glass substrate by thermal evaporation method at room temperature (RT) and at various substrate temperatures of 150 • C, 250 • C, 350 • C and 450 • C. The deposited films were annealed at 450 • C for 30 min under the vacuum of ∼ 10 −5 Torr. The effects of annealing on the structural and optical properties of the as deposited SnSe films are reported in this article. Scanning Electron Microscopy shows the modification in surface morphology of SnSe thin films due to annealing. Annealing of the films reduces the transmittance and enhances optical band gap of SnSe films.

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“…The structure of the deposited thin films strongly influences the electronic properties which are highly dependent on the preparation technique and deposition conditions. Considerable attention has been devoted by various authors to the preparation of SnSe thin films by different methods like vacuum evaporation [2][3][4][5][6][7][8][9][10][11][12], flash evaporation [13], hot wall epitaxy [14,15], reactive evaporation [16], electrodeposition [17][18][19][20], laser ablation [21,22], brush plating [23], chemical bath deposition (CBD) [24] and electrochemical atomic layer epitaxy (ECALE) [25] to study various physical properties.…”

Section: Introductionmentioning

confidence: 99%