Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method

Abstract

SrBi 2 Ta 2 O 9 (SBT) ferroelectric thin films were prepared by metalorganic decomposition on Pt/Ti/SiO2/Si substrates at annealing temperatures ranging from 600 to 750 °C. The SBT thin films were annealed layer by layer during the spin-coating process using a rapid thermal annealing (RTA) furnace. The relative intensity of (200) peak in x-ray diffraction increased with the increase of the annealing temperature. A (200)-predominant film can be formed at 700 and 750 °C. For the film annealed by RTA furnace at 650 °C, the remanent polarization (2Pr) and coercive field (2Ec) were 19.8 μC/cm2 and 116 kV/cm, respectively.

Enhanced a-axis-oriented crystal growth of Nd-substituted bismuth titanate thin films with layer-by-layer crystallization

“…Recently, an interesting effect has been reported for SrBi 2 Ta 2 O 9 films prepared by chemical solution deposition [10,11]. Films fabricated with this method are normally processed with the repeated spin-coating and baking, to the desired thickness, followed with a final high-temperature treatment to crystallize the film.…”

The influence of crystallization route on the Ce-doped Bi2Ti2O7 thin film by metal organic decomposition

“…The diffraction peaks for the films annealed through SLA at 550 • C, 600 • C, and 650 • C are stronger than those for the films prepared using CA at the corresponding temperatures, respectively. This may be due to the fact that for SLA crystallized route, each layer can serve as a nucleation seed for the next layer [16]. Note that, for the films prepared by SLA, several peaks of the perovskite phase appear for the annealing temperature higher than 550 • C. This can be attributed to the fact that the grain growth along the direction perpendicular to the film surface is limited in the film prepared by SLA.…”

Effect of in situ applied electric field on the growth of La2Ti2O7 thin films by chemical solution deposition

“…One is to use suitable substrates that are either lattice-matched or to employ a proper buffer layer [12,13]. The other is to find proper precursor solution or heat treatment processing [14,15]. These routes have their limitations.…”