1993
DOI: 10.4028/www.scientific.net/kem.89-91.599
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Structure Dependent Creep and Crack Propagation in Silicon Nitrides

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“…It is a nearly universal phenomenon that annealing silicon nitride in air improves its creep resistance. [31][32][33][34][35][36][37][38][39][40] Only rarely does it degrade creep resistance. 38,41 The surface oxide layer that forms during oxidation is only one of the many responses of the material.…”
Section: (2) Specimen Size Effectsmentioning
confidence: 99%
“…It is a nearly universal phenomenon that annealing silicon nitride in air improves its creep resistance. [31][32][33][34][35][36][37][38][39][40] Only rarely does it degrade creep resistance. 38,41 The surface oxide layer that forms during oxidation is only one of the many responses of the material.…”
Section: (2) Specimen Size Effectsmentioning
confidence: 99%