Metal-free semiconductors with desirable characteristics have recently gained great attention in the field of hydrogen generation. The non-metal material B2S3 has two phases, hexagonal B2S3 (h-B2S3) and orthorhombic B2S3 (o-B2S3), which compose a novel class of 2D materials. Both h-B2S3 and o-B2S3 monolayers are direct semiconductors with bandgaps of 2.89 and 3.77 eV by the Heyd-Scuserria-Ernzerhof (HSE) function, respectively. Under appropriate uniaxial strain (1%), the bandgap of h-B2S3 can be decreased to 2.8 eV. The carrier mobility can reach 1160 cm2 V−1 s−1, supporting the fast migration of photo-induced carriers. Most importantly, the band edges of both h-B2S3 and o-B2S3 cover the reduction and oxidation levels for water splitting. We explore the process of photocatalytic water splitting on h-B2S3 monolayers by analyzing the feasibility of the decomposition of H2O and the generation of H2. The results indicate that the special mesoporous structure of B2S3 is helpful for photocatalytic hydrogen production. The new nanomaterial, B2S3, offers great promise as a metal-free photocatalyst due to its tunable bandgaps, its useful band edges, and its other excellent electronic properties.