The article contains sections titled:
Introduction
Physical and Technical Principles
Driving Force, Undercooling, and Supersaturation
Formation of an Initial Crystal
Crystal Growth
Mass Transfer of Crystal Species and their Incorporation
Mass Transport through Chemical Reactions
Heat Transfer into the Crystal
Growth Rates from Theoretical Models
Principles of Crystal‐Growth Procedures
Crystal Growth in Monocomponent Systems
Crystal Growth in Multicomponent Systems
Selection of Crystal‐Growth Method
Basic Components of Crystal‐growth Equipment
Containers
Heating Apparatus
Resistance Heater
Induction Heater
Other Heat Sources
Temperature Control
Growth‐Rate Control
Environment
Techniques of Crystal Growth
Techniques of Crystal Growth from the Vapor Phase
P
izzarello Method
Temperature Gradient Technique
Temperature Difference Technique
Techniques for Crystal Growth from the Liquid Phase
C
zochralski Technique
B
ridgman Technique
Temperature Gradient Technique
Liquid‐Zone Techniques
Techniques of Crystal Growth from a Solution
Solvent Evaporation
Temperature Difference Techniques
Techniques with Gel Media
Slow‐Cooling Techniques
Techniques of Crystal Growth from the Solid Phase (Recrystallization)
Techniques of Thin‐film Growth
Liquid‐Phase Epitaxy
Chemical Vapor Epitaxy
Molecular‐Beam Epitaxy
Characterization of Crystals
Morphology
Segregation of Impurities
Segregation Coefficients
Impurity Distribution through Zone Refining
Precipitation
Structural Defects
Point Defects
Line Defects
Two‐Dimensional Defects
Examples of Applications
C
zochralski Techniques
Edge‐Defined Film‐Fed Growth
Dendritic Silicon Web Growth
Float Zoning of Silicon
High‐Pressure Technique of Diamond Growth
