1962
DOI: 10.1063/1.1728974
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Structure in the Excess Current Region of Gallium Arsenide Tunnel Diodes

Abstract: Articles you may be interested inFabrication of a gated gallium arsenide heterostructure resonant tunneling diode J. Vac. Sci. Technol. B 8, 393 (1990); 10.1116/1.585032 Diode current detection of extended xray absorption fine structure in gallium arsenide

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