Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs

Abstract

Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature Appl. Phys. Lett. 95, 182505 (2009); 10.1063/1.3259821Spin-glass-like behavior caused by Mn-rich Mn(Ga)As nanoclusters in GaAs

Memory effect of Mn5Ge3 nanomagnets embedded inside a Mn-diluted Ge matrix

“…The inset ͑a͒ of Fig. 12,17,18 We also measured the thermoremanent magnetization ͑TRM͒ as a function of time below and slightly above the blocking temperature ͑around 170 K͒ of Mn 5 Ge 3 nanomagnets. This value is much smaller than 2.74 B / Mn for bulk Mn 5 Ge 3 , 14 which results from two facts: Mn ions only partially form Mn 5 Ge 3 nanocrystals 15 and the magnetization of nanoparticles is slightly smaller than that of bulk Mn 5 Ge 3 .…”

“…2 shows the hysteresis loop measured at 5 K. Note that the saturation magnetization is around 0.75 B / Mn. If the superparamagnetic nanoparticles undergo collective behavior due to direct dipole-dipole interaction or particle size distribution, a stretched exponential form is expected, 12,18 16 In order to study the time-dependent magnetization of Mn 5 Ge 3 nanomagnets, we performed history-dependent magnetic memory measurements using a cooling and waiting protocol suggested by Sun et al 17 We cooled the sample at 50 Oe and recorded the magnetization during cooling, but temporarily stopped at 200, 150, 100, 50, and 20 K for a waiting period of 2 h. During waiting, the field was set to zero.…”

Unlocking the Magnetic and Half-Metallic Properties of AMY2 (A = Cu, Ag; M = Sc, Ti, V, Cr, Mn, Fe; Y = S, Se) Compounds in Chalcopyrite Structure: An Ab Initio Study for Spintronics Applications

“…As a result, research on TM-doped binary semiconductors has received significant attention in both theoretical and experimental aspects of spintronics [9][10][11]. However, despite exhibiting ferromagnetism (FM), binary FM semiconductors encounter challenges in practical spintronic applications due to the rapid loss of spin polarization through spin-flip scattering, attributed to the low solubility of magnetic ions in the binary substrates [4,5,12,13]. To address these limitations, the search for new HMF materials with compatibility with traditional semiconductors' structure and lattice matching has become imperative, opening possibilities for practical applications in spintronics when coated as thin films [14].…”

Electronic structure and magnetic properties of chalcopyrite type ZnMX2 (M = Sc, V, Cr, Mn, Fe; X = P, As) compounds: An ab initio study

“…Among these HMF materials, it has been recognized that the transition metal‐based zincblende (ZB)‐type structured thin films are well suited to be grown on appropriate semiconductor substrates for spintronics applications. There are numerous experimental confirmations of HMF ZB‐structured CrAs and CrSb thin films grown on appropriate ZB (GaAs) semiconductor substrate in (100) planes by the molecular beam epitaxial method with desirable Curie temperatures . However, for practical device applications, these ZB‐structured thin films exhibit difficulty when grown on substrates, since the transition‐metal (TM) ions agglomerate or cluster together (too deep) along the substrate .…”

“…There are numerous experimental confirmations of HMF ZB‐structured CrAs and CrSb thin films grown on appropriate ZB (GaAs) semiconductor substrate in (100) planes by the molecular beam epitaxial method with desirable Curie temperatures . However, for practical device applications, these ZB‐structured thin films exhibit difficulty when grown on substrates, since the transition‐metal (TM) ions agglomerate or cluster together (too deep) along the substrate . TM ions clustering on the substrates lead to complexity in maintaining ferromagnetism at higher Curie temperatures.…”