Structure modelling and reciprocal space maps simulation of the (Ga,Al)N epitaxial layers deposited on the sapphire substrate

Kozłowski, J.; Serafińczuk, J.

doi:10.1016/j.jallcom.2005.03.065

Cited by 2 publications

(2 citation statements)

References 4 publications

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“…GaN layers deposited on heteroepitaxy processes mostly on sapphire substrates have extended shape of their RLP . This is due to the lattice mismatch between the substrate and the layers and therefore due to columnar structure of the GaN layer . In figure , RLMs of symmetrical planes of various substrates are shown.…”

Section: Structural Studiesmentioning

confidence: 99%

Structural properties of bulk GaN substrates: Impact of structural anisotropy on non‐polar and semi‐polar crystals

Serafińczuk

Kucharski

Zając

et al. 2015

Crystal Research and Technology

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In this paper we show the structural parameters and structural anisotropy of the bulk GaN substrates of various crystallographic orientations (00.1), (10.0), (11.0) and (20.1) obtained by ammonothermal method. The structural parameters were investigated using high resolution X‐Ray Diffraction. Perfect crystalline structure manifests in very narrow peaks in X‐ray rocking curves. The full width at half maximum (FWHM) values of 16 and 18 arcsec for the symmetrical and asymmetrical peaks, respectively, have been observed. In addition, we observed structural anisotropy in the non‐polar and semi‐polar crystals, depending on the orientation of the sample relative to the X‐ray beam. It is conducted that this anisotropy is a intrinsic property of non‐polar and semi‐polar GaN substrates.

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Section: Structural Studiesmentioning

confidence: 99%

Structural properties of bulk GaN substrates: Impact of structural anisotropy on non‐polar and semi‐polar crystals

Serafińczuk

Kucharski

Zając

et al. 2015

Crystal Research and Technology

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“…Characterization process of such structures, possesses many problems and the appointment of the value of these undesirable attributes in some cases is difficult. Various methods of characterization of such structures can be carried out in different ways [5][6][7][8][9][10][11][12][13][14][15], e.g. by measuring a number of diffraction reflections [5][6][7], by analyzing the shape of the diffraction reflections or reciprocal lattice points (RLP) [8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Determination of lateral block size and mosaicity of crystals using X‐ray diffraction from the edge of the sample

Serafińczuk

2016

Crystal Research and Technology

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In this paper a novel lateral block size characterization method based on X‐ray diffractometry (XRD) is presented. The developed method based on scans of plans perpendicular to the surface visible from the edge of the sample and subconsequent numerical analysis based on Scherrer equation. In presented investigations as a reference sample bulk GaN substrate fabricated by AMMONO Ltd. was used. The GaN layers deposited on sapphire substrate were investigated as a case of study. Moreover, a method of analyzing the magnitude of the tilt and twist mosaicity based on the scans of rocking curves and reciprocal lattice maps (RLM) from the edge of sample is presented. As an example for this methodology highly mosaicited SiC crystal was used. Presented approach allows to directly determine the value of the angular deviation of mosaicity in a direction perpendicular and parallel to the sample surface.

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Structure modelling and reciprocal space maps simulation of the (Ga,Al)N epitaxial layers deposited on the sapphire substrate

Cited by 2 publications

References 4 publications

Structural properties of bulk GaN substrates: Impact of structural anisotropy on non‐polar and semi‐polar crystals

Structural properties of bulk GaN substrates: Impact of structural anisotropy on non‐polar and semi‐polar crystals

Determination of lateral block size and mosaicity of crystals using X‐ray diffraction from the edge of the sample

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