Structure, morphology and electrical properties of Mg2Si layers deposited by pack cementation

Oxidation resistance of magnesium silicide under high-temperature air exposure

“…The thickness of the as-formed Mg 2 Si coating formed by pack cementation reported in previous paper from the same research team was 80 lm (±7 lm) [18]. The oxidation resistance of pack-cemented Mg 2 Si was also elementary evaluated by performing a single non-isothermal oxidation by heating the specimen from room temperature up to 1000°C.…”

“…More details on the pack cementation process can be found in Ref. [18]. The oxidation tests took place in a Setaram TG-DTA Setsys 16/18 device, in which the Mg 2 Si-coated specimens were placed in alumina crucibles.…”

“…The oxidation resistance of Mg 2 Si is reported rarely in the literature, and in most cases, the samples are in pellet form [20,21]. In previous publications [18,22,23], in which the structure of the as-deposited Mg 2 Si coatings is examined, it is reported that the only phase present in the as-formed samples was Mg 2 Si without the presence of any oxide. However, the oxidation performance of these samples was not thoroughly examined.…”

“…In both cases, Mg reacts with the Si substrate and forms the Mg 2 Si intermetallic compound. In a recent publication [18], pack cementation deposition technique was referred to be suitable for the formation of Mg 2 Si. Moreover, it is reported to be costeffective as it is a simple and energy-saving process, friendlier to the environment comparing with the already developed methods [19].…”

“…[15]. Furthermore, Mg 2 Si is a narrow-gap semiconductor (E g = 0.3 -0.6 eV) [16] which has FCC lattice with antifluorite-type structure (Fm3m) which is composed of one molecule unit per cell [16][17][18] and is suitable for most thermoelectric applications.…”