Structure of boron nitride nanotubules

Demczyk, B. G.; Cumings, John; Zettl, A.; Ritchie, R.O.

doi:10.1063/1.1367906

Cited by 72 publications

(29 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is worth noting that the zig-zag atomic arrangement was also found to be dominant in B-doped C NTs. [117] The zigzag BNNTs were repeatedly observed by Terauchi et al, [94] Ma et al, [92,118] Demczyk et al, [114] and Lee et al [91] in BNNTs prepared via different synthetic routes. In spite of different helicity types sometimes determined in BNNTs, various authors did agree on a characteristic grouping of all chiralities around one sole orientation (no matter what it is).…”

Section: Atomic Order As Revealed By Electron Diffractionmentioning

confidence: 74%

“…However, in some experiments the authors observed arm-chair and zigzag configurations being nearly equally plausible. [111,114,115] Interestingly, theoretical predictions based on molecular dynamics calculations performed by Blase et al [99] favored the growth of arm-chair BN tubes rather than zig-zag ones, but the significant difference between experimental synthesis temperatures, 5000°C [58][59][60] and 1500-1700°C, [76][77][78][79][80][81][82][83][84][85][86] and that used for Blasé's calculations, ca. 2700°C, [99] should be taken into account.…”

Section: Atomic Order As Revealed By Electron Diffractionmentioning

confidence: 93%

See 1 more Smart Citation

Boron Nitride Nanotubes

et al. 2007

View full text Add to dashboard Cite

The current status of research on boron nitride nanotubes (BNNTs)—carbon nanotube structural analogues—is discussed. Latest achievements in BNNT synthesis, morphology, and atomic structure analysis as well as physical, chemical, and functional property evaluations are reviewed. Similarities and differences between structural parameters and properties of BNNTs in comparison with conventional carbon nanotubes are particularly highlighted. Recent breakthroughs in BNNT filling, doping and functionalization, morphology, and electronic structure engineering are examined. Finally, prospective BNNT applications for fabricating field‐effect transistors, gas accumulators, and reinforcing polymer films are presented.

show abstract

Section: Atomic Order As Revealed By Electron Diffractionmentioning

confidence: 74%

Section: Atomic Order As Revealed By Electron Diffractionmentioning

confidence: 93%

Boron Nitride Nanotubes

et al. 2007

View full text Add to dashboard Cite

show abstract

“…The electric dipole moments of heteropolar tubes provide crucial information for understanding their structures, elementary excitations and phase behavior [16,17]. They are related, for example, with an assortment of new photogalvanic effects [11].…”

mentioning

confidence: 99%

Electric Polarization of Heteropolar Nanotubes as a Geometric Phase

2002

View full text Add to dashboard Cite

The three-fold symmetry of planar boron nitride, the III-V analog to graphene, prohibits an electric polarization in its ground state, but this symmetry is broken when the sheet is wrapped to form a BN nanotube. We show that this leads to an electric polarization along the nanotube axis which is controlled by the quantum mechanical boundary conditions on its electronic states around the tube circumference. Thus the macroscopic dipole moment has an intrinsically nonlocal quantum mechanical origin from the wrapped dimension. We formulate this novel phenomenon using the Berry's phase approach and discuss its experimental consequences. 72.40.+w, 78.20.Jq, 61.48.+c, 85.40.Ux Physical properties of materials at the nanoscale can differ dramatically from their bulk counterparts. This is especially evident in the electronic properties, since the quantum behavior of electrons on this scale is sensitive to the size, shape and symmetry of the sample. Recent discovery of carbon nanotubes [1] provides a striking example, where metallic or semiconducting tubes of identical compositions have only slightly different radii [2][3][4]. Layered BN provides a III-V analog to these materials; it can be formed in single and multiwall nanotubes that have the same Bravais lattice as their graphene counterparts, but with inequivalent atomic species on its two sublattices [5,6].Here we show that the broken sublattice symmetry produces a macroscopic electric polarization in BN nanotubes, dependent on their topology. Remarkably, this ground state polarization is an intrinsically nonlocal quantum effect that cannot be described by a classical theory. The sign and size of the longitudinal polarization of the heteropolar tube are controlled by the boundary conditions on its electronic wave functions along its wrapped compact dimensions. We analyze this novel phenomenon by developing a quantum theory of the nanotube polarization in terms of a geometric phase [7][8][9].A natural description of the electronic properties of this system is developed from an expansion of the tight binding Hamiltonian for the π electrons at small wavevectors q around the K and K ′ points at the corners of the Brillouin zone of the 2D hexagonal lattice [10,11]. Introducing index α = ±1 for these points then leads to the long wavelength Hamiltonians [10][11][12]

show abstract

“…Minimal lattice energy calculations suggest that zig-zag is the most favourable chirality for BN nanotubes. In addition, the zig-zag BN nanotubes were repeatedly observed by Terauchi et al [19], Ma et al [20,21], Demczyk et al [22] and Lee et al [23], prepared by different synthetic routes.…”

Section: Introductionmentioning

confidence: 73%

The effect of C atom concentration on the electronic properties of boron carbonitride alloy nanotube in zig-zag form

Moghaddam

2011

Pramana - J Phys

View full text Add to dashboard Cite

Electronic properties of single-walled boron nitride nanotube in zig-zag form are numerically investigated by replacing B atoms with C atoms. Using a tight-binding Hamiltonian, the methods based on Green's function theory, Landauer formalism and Dyson equation, the electronic density of states and electronic conductance in boron nitride nanotube and boron carbonitride nanotube are calculated. Our calculations indicate that in a boron nitride nanotube, the localized states associated with C impurities appear as the concentration of C atoms increases. The boron carbonitride nanotube thus behaves like a semiconductor. Also, by increasing the C atom concentration, the voltage in the first step on the I-V characteristics decreases, whereas the corresponding current increases.

show abstract

Structure of boron nitride nanotubules

Cited by 72 publications

References 19 publications

Boron Nitride Nanotubes

Boron Nitride Nanotubes

Electric Polarization of Heteropolar Nanotubes as a Geometric Phase

The effect of C atom concentration on the electronic properties of boron carbonitride alloy nanotube in zig-zag form

Contact Info

Product

Resources

About