2013
DOI: 10.1063/1.4791576
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Structure of epitaxial L1-FePt/MgO perpendicular magnetic tunnel junctions

Abstract: Perpendicular magnetic tunnel junctions (p-MTJs) with MgO barriers are interesting for high-density information-storage devices. Chemically ordered L10-FePt is a potential electrode due to its large perpendicular magnetocrystalline anisotropy. To-date, a single theoretical study on L10-FePt/MgO p-MTJ based on an idealized structure reported significant dependence of spin-dependent tunneling on interface structure. [Y. Taniguchi et al., IEEE Trans. Magn. 44, 2585 (2008).] We report a structural study of epitaxi… Show more

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Cited by 23 publications
(15 citation statements)
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“…Compared with in-plane magnetized films, out-of-plane films exhibit several key advantages, including high information-storage density, good thermal stability and low threshold switching current in the spin transfer torque [1][2][3]. Among these potential materials, chemically ordered L1 0 FePt alloy/multilayers are specially promising for magnetic recording and magnetic random access memory due to its large perpendicular magnetocrystalline anisotropy [4,5]. Unfortunately, the formation of L1 0 -ordered FePt films need higher annealing temperature, appropriate single crystal substrates, and optimized underlayers [6][7][8], limiting their wider practical applications.…”
Section: Introductionmentioning
confidence: 98%
“…Compared with in-plane magnetized films, out-of-plane films exhibit several key advantages, including high information-storage density, good thermal stability and low threshold switching current in the spin transfer torque [1][2][3]. Among these potential materials, chemically ordered L1 0 FePt alloy/multilayers are specially promising for magnetic recording and magnetic random access memory due to its large perpendicular magnetocrystalline anisotropy [4,5]. Unfortunately, the formation of L1 0 -ordered FePt films need higher annealing temperature, appropriate single crystal substrates, and optimized underlayers [6][7][8], limiting their wider practical applications.…”
Section: Introductionmentioning
confidence: 98%
“…Пленки с L1 0 (001) структурой обладают высокой константой перпендикулярной магнитной анизотропии (ПMA) K U = K 1 − 2πM 2 S (2πM 2 S -анизотропия формы пленки, где M S -намагниченность насыщения). Однако в упорядоченных фазах с L1 2 -структурой в силу кубиче-ской симметрии существование ПМА не предполагает-ся [5][6][7]. Хорошо известно, что все классические виды магнитных анизотропий описываются синусоидальными законами.…”
Section: Introductionunclassified
“…Тонкие пленки FePd, CoPt и FePt, упорядоченные по типу L1 0 , имеют тетрагональную структуру и исследуются из-за высоких значений магнитной анизотропии для практических приложений [1,2]. Следуя диаграмме фазового равновесия, упорядоченные L1 2 −FePt 3 , L1 2 −Fe 3 Pt-фазы и химически неупорядоченные ГЦК твердые растворы (ГЦК-А 1 ), также существуют в Fe−Pt системе.…”
Section: Introductionunclassified