Structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Fe</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mi mathvariant="normal">Si</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Ga</mml:mi><mml:mi mathvariant="normal">As</mml:mi><mml:mrow><mml:mo>(</mml:mo><mml:mn>001</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>epitaxial films from x-ray crystal truncation rods

Kaganer, Vladimir M.; Jenichen, B.; Shayduk, Roman; Braun, Wolfgang

doi:10.1103/physrevb.77.125325

Cited by 11 publications

(21 citation statements)

References 44 publications

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“…Knowing that the top layer should always be mixed terminated 13 and considering that the density of states for Fe A,B is always greater than that of Si for the considered energies 15 we tentatively assign the visible sublattice to Fe B atoms.…”

Section: Surface Atomic Structure and Defectsmentioning

confidence: 96%

“…13 Using STM on the atomic scale, we are now able to assign this disorder to mainly two types of defects. The first type consists of antisite defects of which two representative specimens are indicated by dotted black and white crosslines in the inset of Figure 7.…”

Section: Surface Atomic Structure and Defectsmentioning

confidence: 99%

“…13) and 24 nm h À1 (Ref. 8) which, at least for amounts of Si between 22.5% and 25.5%, result in long range ordering.…”

mentioning

confidence: 99%

“…14 investigated using XRD crystal truncation rod studies revealing that the interface layer on the GaAsð001Þ substrate is either mixed or only consists of Fe atoms depending on As residues on the substrate surface and that the top layer of the silicide is always a mixed one. 13 Regarding atomic ordering, controversial results can be found where the films grown in Ref. 13 are fully ordered except for the top two layers and Ref.…”

mentioning

confidence: 99%

“…13 Regarding atomic ordering, controversial results can be found where the films grown in Ref. 13 are fully ordered except for the top two layers and Ref. 15 finds disorder resulting from an interdiffusion between substrate atoms and those of the Fe 3 Si layer.…”

mentioning

confidence: 99%

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Surface morphology and atomic structure of thin layers of Fe3Si on GaAs(001) and their magnetic properties

Noor

Barsukov

Özkan

et al. 2013

Journal of Applied Physics

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Effect of size, composition, and morphology on magnetic performance: First-order reversal curves evaluation of iron oxide nanoparticlesThe structural and magnetic properties of ultrathin near-stoichiometric Fe 3 Si layers on GaAs(001) are investigated after using scanning tunneling microscopy (STM) analysis to optimize the deposition process. This includes atomic resolution imaging of the surface as measured by STM revealing the atomic ordering and characteristic defects in the topmost layers. Emphasis is laid on connections between the layer morphology and its magnetic properties, which are analysed by in situ MOKE, FMR, and SQUID magnetometry. Upon nucleation, the Fe 3 Si islands behave like superparamagnetic nanoparticles where we find a quantitative agreement between the size of the nanoparticles and their superspin. At higher coverage, the Fe 3 Si layers show ferromagnetic behaviour. Here, we investigate the superposition of the magnetocrystalline and the uniaxial anisotropies where the latter can be excluded to be caused by shape anisotropy. Furthermore, an unexpected increase of the magnetic moment towards low coverage can be observed which apart from an increased orbital moment can be attributed to an increased step density. V C 2013 American Institute of Physics. [http://dx.

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Section: Surface Atomic Structure and Defectsmentioning

confidence: 96%

Section: Surface Atomic Structure and Defectsmentioning

confidence: 99%

“…13) and 24 nm h À1 (Ref. 8) which, at least for amounts of Si between 22.5% and 25.5%, result in long range ordering.…”

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Surface morphology and atomic structure of thin layers of Fe3Si on GaAs(001) and their magnetic properties

Noor

Barsukov

Özkan

et al. 2013

Journal of Applied Physics

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Synchrotron Radiation Experimental Techniques

Tai

Huang

et al. 2018

Synchrotron Radiation in Materials Science

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High‐Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces

Disa

Walker

Ahn

2020

Adv Materials Inter

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In crystalline materials, the presence of surfaces or interfaces gives rise to crystal truncation rods (CTRs) in their X‐ray diffraction patterns. While structural properties related to the bulk of a crystal are contained in the intensity and position of Bragg peaks in X‐ray diffraction, CTRs carry detailed information about the atomic structure at the interface. Developments in synchrotron X‐ray sources, instrumentation, and analysis procedures have made CTR measurements into extremely powerful tools to study atomic reconstructions and relaxations occurring in a wide variety of interfacial systems, with relevance to chemical and electronic functionalities. In this review, an overview of the use of CTRs in the study of atomic structure at interfaces is provided. The basic theory, measurement, and analysis of CTRs are covered and applications from the literature are highlighted. Illustrative examples include studies of complex oxide thin films and multilayers.

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Structure ofFe3Si∕GaAs(001)epitaxial films from x-ray crystal truncation rods

Cited by 11 publications

References 44 publications

Surface morphology and atomic structure of thin layers of Fe3Si on GaAs(001) and their magnetic properties

Surface morphology and atomic structure of thin layers of Fe3Si on GaAs(001) and their magnetic properties

Synchrotron Radiation Experimental Techniques

High‐Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces

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