Structure of Polycrystalline Silicon Thin Film Fabricated   from Fluorinated Precursors by Layer-by-Layer Technique

Ishihara, S.; He, Deyan; Shimizu, Isamu

doi:10.1143/jjap.33.51

Cited by 30 publications

(10 citation statements)

References 12 publications

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“…The TEM observations are consistent with those reported by many authors 29,51,54 and also with our XRD analyses, providing coherent domain sizes lower than 10 nm on average. These domains are much smaller than the apparent crystal sizes probed by TEM, and porosity, resulting in small apparent XRD thicknesses.…”

Section: B Temsupporting

confidence: 93%

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Structural and microstructural characterization of nanocrystalline silicon thin films obtained by radio-frequency magnetron sputtering

Morales

Leconte

Rizk

et al. 2005

Journal of Applied Physics

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Textured silicon thin films are deposited by reactive magnetron sputtering in hydrogen-rich plasma on ͑100͒-Si and amorphous SiO 2 substrates. We quantitatively determine, combining x-ray texture analysis, x-ray reflectivity, transmission electron microscopy, atomic force microscopy measurements, and Raman and Fourier transform infrared spectroscopy analyses, the structure ͑cell parameter and mean electron density͒ and microstructure ͑crystalline fraction, preferred orientations, anisotropic crystallite sizes, thicknesses, etc.͒ of these films. For both kinds of substrates, no perfect ͗111͘ orientation is observed whereas a systematic elongation of the anisotropic Si crystallites along one ͓111͔ direction is present. A small elongation of the Si cell parameter of the nanocrystals is found without internal stress. With the substrate to target distance, the crystalline fraction and mean electron density show an opposite behavior to that of the film porosity. The former increases and the latter decreases, and are correlated to the texture evolution. Preferred orientations are observed with texture strengths around two to three times a random distribution, with a tendency to achieve lower strengths for films grown on SiO 2 substrates. The texture components are evolving with the substrate to target distance, with ͗110͘ and ͗hhᐉ͘ ͑ᐉ larger than 2͒ orientations favored for smaller and larger distances, respectively. All these microstructural properties are correlated with their optical properties and more particularly to their refractive index and their optical band gap.

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Section: B Temsupporting

confidence: 93%

“…56. The assumption of equivalent signal efficiency for amorphous and crystalline phases 54,57 leads to an overestimate of f c . The crystalline Raman Si-Si TO modes of concern exhibit a high local symmetry, which removes any textural effects from the crystalline part.…”

Section: Crystalline Ratio and Hydrogen Contentmentioning

confidence: 99%

Structural and microstructural characterization of nanocrystalline silicon thin films obtained by radio-frequency magnetron sputtering

Morales

Leconte

Rizk

et al. 2005

Journal of Applied Physics

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“…Then it was confirmed that the films prepared over 150 W have almost the same columnar microstructure indicated previous report [12]. The films prepared under 100 W have completely amorphous phase, and the films prepared over 150 W have a crystalline phase.…”

Section: Microstructual Observation With Hrtemsupporting

confidence: 83%

Structure and Optical Characterization of Nanocrystalline Silicon Thin Films for Solar Cells

Morisawa

Shirakura

et al. 2009

MRS Proc.

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Effects of very high frequency-plasma enhanced chemical vapor deposition (VHF-PECVD) using diluted ultrapure silane at higher dilution ratio (R>30) on microstructures and optical characteristics of hydrogenated nanocrystalline silicon (nc-Si:H) film were studied. Nanocrystalline silicon films were prepared by at RF power ranging from 50 to 300 W. It was found that the transition from amorphous phase to nanocrystalline phase occurred between 100 W and 150 W. The nucleation mechanism toward nc-Si:H near the transition point of amorphous phase was discussed based on transmission electron microscopy with atomic scale. Further, it is suggested from UV-visible spectroscopy that nc-Si:H films with the best optical properties would be obtained near the transition point from the amorphous phase to the crystalline phase.

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“…Thus many attempts have been made to improve film crystallinity during the initial growth of poly-/ c-Si:H on glass. [7][8][9][10] In our previous work, we have reported on high crystallinity, high quality poly-Si:H films prepared on glass from SiF 4 and H 2 gas mixtures, where a fluorinated source gas enhances crystallization and crystallite growth. 11 The film microstructures including the grain orientation are controlled by selecting appropriate deposition conditions, 12,13 which would lead to suitable device applications.…”

Section: Introductionmentioning

confidence: 99%

Growth, structure, and transport properties of thin (>10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor

Kamiya

Nakahata

Tan

et al. 2001

Journal of Applied Physics

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Microcrystalline silicon ( c-Si:H) thin films were prepared at 300°C on glass. Their structure and transport properties were studied in a wide range of film thickness ranging from 10 nm to 1 m. The crystal fraction increases monotonously from ϳ64% to ϳ100% as film thickness increases. Electron mobility first increases with increasing film thickness at thicknesses smaller than 50 nm but saturates at larger thickness. This mobility behavior is explained by percolation transport through crystalline grains. These results are different from those obtained with preferentially oriented polycrystalline silicon films. It is related to the difference in the microstructure evolution in which subsequent film growth is influenced by the growth surface structure. A single-electron transistor fabricated in 30-nm-thick c-Si:H exhibits Coulomb blockade effects at 4.2 K. This result indicates that amorphous phases which exist between crystalline grains behave as tunnel barrier for electrons.

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Structure of Polycrystalline Silicon Thin Film Fabricated from Fluorinated Precursors by Layer-by-Layer Technique

Cited by 30 publications

References 12 publications

Structural and microstructural characterization of nanocrystalline silicon thin films obtained by radio-frequency magnetron sputtering

Structural and microstructural characterization of nanocrystalline silicon thin films obtained by radio-frequency magnetron sputtering

Structure and Optical Characterization of Nanocrystalline Silicon Thin Films for Solar Cells

Growth, structure, and transport properties of thin (>10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor

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Structure of Polycrystalline Silicon Thin Film Fabricated from Fluorinated Precursors by Layer-by-Layer Technique

Cited by 30 publications

References 12 publications

Structural and microstructural characterization of nanocrystalline silicon thin films obtained by radio-frequency magnetron sputtering

Structural and microstructural characterization of nanocrystalline silicon thin films obtained by radio-frequency magnetron sputtering

Structure and Optical Characterization of Nanocrystalline Silicon Thin Films for Solar Cells

Growth, structure, and transport properties of thin (&gt;10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor

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Growth, structure, and transport properties of thin (>10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor