“…In order to explain the operation of this memory and in particular its very short switching time hardly compatible with the mobility of Ag + ions, various hypotheses have been proposed and among them, the presence of pre-existing silver-rich zones within the amorphous film-which would be heterogeneousand the creation of conduction paths between these zones. To confirm this hypothesis and to better understand the phenomena at the origin of the switching from a resistive state to a conductive state in CB-RAM memories, the electrical, structural, and thermal properties of bulk Ag-Ge-Se glasses have been widely studied (Dejus et al, 1988(Dejus et al, , 1991(Dejus et al, , 1992Kawasaki et al, 1999;Mitkova et al, 1999;Iyetomi et al, 2000;Piarristeguy et al, 2000Piarristeguy et al, , 2003Piarristeguy et al, , 2007aPiarristeguy et al, , 2012Ureña et al, 2003Ureña et al, , 2005Wang et al, 2003;Cervinka et al, 2005;Tafen et al, 2005;Cuello et al, 2007;Prasai and Drabold, 2011;Le Parc et al, 2013;Stellhorn et al, 2016a,b;Zeidler et al, 2016Zeidler et al, , 2018. It was shown that the conductivity of Ag x (Ge 0.25 Se 0.75 ) 100−x glasses with 1 < x < 30 at.…”