Structure of the high-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>T</mml:mi></mml:mrow><mml:mrow><mml:mi>c</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>superconductor<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ba</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998

Yan, Qiurong; Zhang, P. L.; Shen, Z. G.; Zhao, Junbin; Ren, Yang; Wei, Y. N.; Liu, C. X.; Ning, T. S.; Sun, Ke; Niu, Shiwen

doi:10.1103/physrevb.37.5845

Cited by 3 publications

(1 citation statement)

References 7 publications

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“…[ 10,11 ] The p–n junction is a building block for most self‐powered optoelectronic and photovoltaic devices. [ 12 ] Several methods, such as chemical doping, [ 13 ] double electrostatic gating, [ 14 ] and vertical 2D‐based heterostructures, [ 15,16 ] have been utilized to form p–n diodes in 2D materials. However, creating p–n diodes with high stability is particularly difficult in atomically thin TMDs due to challenges in selectively doping them into p‐ or n‐type semiconductors [ 13 ] or the 2D material transfer processes.…”

Section: Introductionmentioning

confidence: 99%

Flexible High‐Performance Photovoltaic Devices based on 2D MoS₂ Diodes with Geometrically Asymmetric Contact Areas

Abnavi

Ahmadi

Ghanbari

et al. 2022

Adv Funct Materials

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Optoelectronic performance of 2D transition metal dichalcogenides (TMDs)‐based solar cells and self‐powered photodetectors remain limited due to fabrication challenges, such as difficulty in doping TMDs to form p–n junctions. Herein, MoS2 diodes based on geometrically asymmetric contact areas are shown to achieve a high current rectification ratio of ≈105, facilitating efficient photovoltaic charge collection. Under solar illumination, the device demonstrates a high open‐circuit voltage (Voc) of 430 mV and a short‐circuit current density (Jsc) of −13.42 mA cm−2, resulting in a high photovoltaic power conversion efficiency (PCE) of 3.16%, the highest reported for a lateral 2D solar cell. The diodes also show a high photoresponsivity of 490.3 mA W−1, and a large photo detectivity of 4.05 × 1010 Jones, along with a fast response time of 0.8 ms under 450 nm wavelength at zero bias for self‐powered photodetection applications. The device transferred on a flexible substrate shows a high photocurrent and PCE retentions of 94.4%, and 88.2% after 5000 bending cycles at a bending radius of 1.5 cm, respectively, demonstrating robustness for flexible optoelectronic applications. The simple fabrication process, superior photovoltaic properties, and high flexibility suggests that the geometrically asymmetric MoS2 device architecture is an excellent candidate for flexible photovoltaic and optoelectronic applications.

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Section: Introductionmentioning

confidence: 99%

Flexible High‐Performance Photovoltaic Devices based on 2D MoS₂ Diodes with Geometrically Asymmetric Contact Areas

Abnavi

Ahmadi

Ghanbari

et al. 2022

Adv Funct Materials

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Crystal structures of high-T c oxides

Yvon

François

1989

Z. Physik B - Condensed Matter

258

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Solid‐State Sintering of YBa₂Cu₃O_x in Different Oxygen Partial Pressures

Poisl¹,

Chaklader²

1993

Journal of the American Ceramic Society

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The effect of oxygen partial pressure, ranging from 0.001 to 1.0 atm, and temperature, in the range of 930"-955"C, on the solid-state sintering kinetics of the superconducting ceramic YBa,Cu,O,-, has been studied. Isothermal compaction rates between 930" and 955°C reached a maximum at some critical PO2 (PO;R1T), with decreasing rates both above and below this oxygen partial pressure. This behavior was not observed for YBa,Cu,O,-, sintered at 960"C, when a liquid phase is present. The activation energy for sintering above PO:R1T has been estimated to be -190 kJ/mol, whereas below PO?R1T it was found to be -130 kJ/mol. The oxygen ion diffusion was considered to be the rate-determining step above POFRIT, while it is hypothesized that lattice strain caused by the formation of oxygen ion vacancies below affected the rate of sintering.1177

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Structure of the high-TcsuperconductorBa2
Qiurong Yan
¹
,
P. L. Zhang
²
,
Z. G. Shen
³

et al.

Cited by 3 publications

References 7 publications

Flexible High‐Performance Photovoltaic Devices based on 2D MoS₂ Diodes with Geometrically Asymmetric Contact Areas

Flexible High‐Performance Photovoltaic Devices based on 2D MoS₂ Diodes with Geometrically Asymmetric Contact Areas

Crystal structures of high-T c oxides

Solid‐State Sintering of YBa₂Cu₃O_x in Different Oxygen Partial Pressures

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Structure of the high-TcsuperconductorBa2Qiurong Yan1, P. L. Zhang2, Z. G. Shen3 et al.

Cited by 3 publications

References 7 publications

Flexible High‐Performance Photovoltaic Devices based on 2D MoS2 Diodes with Geometrically Asymmetric Contact Areas

Flexible High‐Performance Photovoltaic Devices based on 2D MoS2 Diodes with Geometrically Asymmetric Contact Areas

Crystal structures of high-T c oxides

Solid‐State Sintering of YBa2Cu3Ox in Different Oxygen Partial Pressures

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Product

Resources

About

Structure of the high-TcsuperconductorBa2
Qiurong Yan
¹
,
P. L. Zhang
²
,
Z. G. Shen
³

et al.

Flexible High‐Performance Photovoltaic Devices based on 2D MoS₂ Diodes with Geometrically Asymmetric Contact Areas

Flexible High‐Performance Photovoltaic Devices based on 2D MoS₂ Diodes with Geometrically Asymmetric Contact Areas

Solid‐State Sintering of YBa₂Cu₃O_x in Different Oxygen Partial Pressures