Structure of the In-rich InAs (001) surface

Goryl, Grzegorz; Toton, Dawid; Goryl, M.; Tomaszewska, Natalia; Kołodziej, Jacek

doi:10.1016/j.susc.2011.08.008

Cited by 17 publications

(7 citation statements)

References 23 publications

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“…We did not detect a similar pattern in TEM ( Figure 2 ), which is a bulk probe, suggesting it is strictly a surface phenomenon. This pattern resembles the surface reconstruction reported for differently oriented surfaces in several III–V compounds in the presence of excessive ions, either cations 21 , 22 or anions. 23 Thus, as the MBE growth of our NWs is conducted under As overpressure, we assert that the reconstruction pattern observed in the STM relates to the excess As ions at the surface.…”

Section: Atomic-scale Superstructure In Tapered Nwssupporting

confidence: 86%

Sub-Band Spectrum Engineering via Structural Order in Tapered Nanowires

et al. 2021

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The cross-sectional dimensions of nanowires set the quantization conditions for the electronic subbands they host. These can be used as a platform to realize one-dimesional topological superconductivity. Here we develop a protocol that forces such nanowires to kink and change their growth direction. Consequently, a thin rectangular nanoplate is formed, which gradually converges into a very thin square tip. We characterize the resulting tapered nanowires structurally and spectroscopically by scanning and transmission electron microscopy and scanning tunneling microscopy and spectroscopy and model their growth. A unique structure composed of ordered rows of atoms on the (110) facet of the nanoflag is further revealed by atomically resolved topography and modeled by simulations. We discuss possible advantages tapered InAs nanowires offer for Majorana zero-mode realization and manipulation.

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Section: Atomic-scale Superstructure In Tapered Nwssupporting

confidence: 86%

Sub-Band Spectrum Engineering via Structural Order in Tapered Nanowires

et al. 2021

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“…(d) based on a model for InAs and InSb 4 × 2 37,38. The respective model for the TMA dosed and annealed surface below 190 • C again induces a surface reconstruction to generate a row order of 90 • with 0.8 nm row spacing,Figure 4(e).…”

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confidence: 98%

Atomic imaging of atomic layer deposition oxide nucleation with trimethylaluminum on As-rich InGaAs(001) 2 × 4 vs Ga/In-rich InGaAs(001) 4 × 2

Melitz

Kent

Kummel

et al. 2012

The Journal of Chemical Physics

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Formation of a contaminant free, flat, electrically passive interface to a gate oxide such as a-Al(2)O(3) is the critical step in fabricating III-V metal oxide semiconductor field effect transistors; while the bulk oxide is amorphous, the interface may need to be ordered to prevent electrical defect formation. A two temperature in situ cleaning process is shown to produce a clean, flat group III or group V rich InGaAs surface. The dependence of initial surface reconstruction and dosing temperature of the seeding of aluminum with trimethylaluminum dosing is observed to produce an ordered unpinned passivation layer on InGaAs(001)-(4 × 2) surface at sample temperatures below 190 °C. Conversely, the InGaAs(001)-(2 × 4) surface is shown to generate an unpinned passivation layer with a seeding temperature up to 280 °C. For both reconstructions, the chemical drive force is consistent with formation of As-Al-As bonds. The optimal seed layer protects the surface from background contamination.

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“…The more the reconstructions included in the calculations, the more accurate the prediction of the fraction of each reconstruction. Therefore, all the previously suggested (4 × 2) reconstructions, such as β3′(4 × 2) 20 , ζ(4 × 2) 17 , 18 , and ζa(4 × 2) 19 , 21 , 22 , were examined. In addition, for the c(4 × 4) reconstructions, not only the homodimers consisting of the six surface As atoms but also the heterodimer configurations were considered, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…One of the plausible reasons for this is that certain unknown (4 × 2) reconstructions may be stable. In fact, several new InAs (001) (4 × 2) reconstructions were suggested, such as β3′(4 × 2) 20 , ζ(4 × 2) 17 , 18 , and ζa(4 × 2) 19 , 21 , 22 , whose feasibilities are still being debated on. Another limitation of the conventional DFT calculations is that they cannot predict the coexistence of multiple reconstructions, although the coexistence of some reconstructions on InAs (001) was experimentally identified, such as the mixture of c(4 × 4) with (2 × 4) 15 , that of β2(2 × 4) with α2(2 × 4) 11 – 13 , and that of (2 × 4) with (4 × 2) 14 .…”

Section: Introductionmentioning

confidence: 99%

Surface reconstruction of InAs (001) depending on the pressure and temperature examined by density functional thermodynamics

Yeu

Park

Han

et al. 2017

Sci Rep

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A detailed understanding of the atomic configuration of the compound semiconductor surface, especially after reconstruction, is very important for the device fabrication and performance. While there have been numerous experimental studies using the scanning probe techniques, further theoretical studies on surface reconstruction are necessary to promote the clear understanding of the origins and development of such subtle surface structures. In this work, therefore, a pressure-temperature surface reconstruction diagram was constructed for the model case of the InAs (001) surface considering both the vibrational entropy and configurational entropy based on the density functional theory. Notably, the equilibrium fraction of various reconstructions was determined as a function of the pressure and temperature, not as a function of the chemical potential, which largely facilitated the direct comparison with the experiments. By taking into account the entropy effects, the coexistence of the multiple reconstructions and the fractional change of each reconstruction by the thermodynamic condition were predicted and were in agreement with the previous experimental observations. This work provides the community with a useful framework for such type of theoretical studies.

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Structure of the In-rich InAs (001) surface

Cited by 17 publications

References 23 publications

Sub-Band Spectrum Engineering via Structural Order in Tapered Nanowires

Sub-Band Spectrum Engineering via Structural Order in Tapered Nanowires

Atomic imaging of atomic layer deposition oxide nucleation with trimethylaluminum on As-rich InGaAs(001) 2 × 4 vs Ga/In-rich InGaAs(001) 4 × 2

Surface reconstruction of InAs (001) depending on the pressure and temperature examined by density functional thermodynamics

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