Structure, optical and magnetic properties of (In1−Fe )2O3 films by magnetron sputtering

Intrinsic or Interface Clustering-Induced Ferromagnetism in Fe-Doped In2O3-Diluted Magnetic Semiconductors

“…Being one of those candidate hosts, In 2 O 3 is another important transparent oxide semiconductor with a direct band gap of 3.75 eV, which can be fabricated as an n-type semiconductor with high electrical conductivity by introducing oxygen deficiencies. , Similar to other wide-band-gap oxide semiconductors, indium oxide has also been widely investigated as the semiconductor host for achieving an intrinsic DMS with a Curie temperature higher than room temperature. In addition, Fe-doped In 2 O 3 is one of the few systems that have shown room-temperature ferromagnetism in bulk state .…”

“…However, the results reported from different research groups varied and were even controversial. Room-temperature ferromagnetism has been observed in Fe-doped In 2 O 3 thin films, − powders, − and bulk materials . The Curie temperature can reach as high as 900 K .…”

57Fe emission Mössbauer spectroscopy following dilute implantation of 57Mn into In 2O3

“…It is difficult to see any correlation between our results and the results of [3], and the different concentration of Fe and/or sample material must be the explanation for the very different findings. Yang et al [4] found both Fe 2+ and Fe 3+ in <16 % Fe doped In 2 O 3 samples prepared by magnetron sputtering, suggesting a transformation from the dilute case where Fe 2+ dominates to a Fe 3+ dominating state, depending on the Fe concentration. This seems though to be at variance with the results of Nomura et al which saw only doublets due to Fe 3+ in sol-gel indium tin oxide material with 6 % Fe [25].…”

“…Doping non-magnetic semiconductors with 3d-elements to obtain dilute magnetic semiconductors (DMSs) has motivated a large amount of research following the theoretical prediction of room temperature (RT) ferromagnetism in ZnO-based DMSs [1]. Here Fe doped In 2 O 3 is among the systems where DMS has been reported [2], and where the charge state of Fe has been suggested to play an important role in the magnetic properties [3,4].…”

Activation and Enhancement of Room-Temperature Ferromagnetic Exchange in (Cu,N)-codoped In2O3 Dilute Magnetic Nanowires

“…In recent years, diluted magnetic oxides (DMOs) by manipulating the charge and spin of electron have drawn immense attention because of their possible applications in spin-dependent multifunctional devices. − Ideal DMO materials require having the Curie temperature ( T C ) above room temperature (RT), high spin polarization, and intrinsic ferromagnetism. Because theoretical prediction based on the Zener models opens a window for achieving RT ferromagnetic ordering in oxide semiconductors with a wide band gap, transition metal (TM)-doped ZnO, TiO 2 , SnO 2 , and In 2 O 3 have been widely investigated. − Indium oxide (In 2 O 3 ) is a very important wide-band gap (3.75 eV) n-type semiconductor and has been considered as a promising candidate for DMOs owing to good conductivity and high chemical stability. , Recently, different research groups have reported that RT ferromagnetism can be obtained in In 2 O 3 -doped with Fe, Mn, Co, Ni, and so forth. − However, similar systems exhibit quiet conflicting magnetic characters, such as paramagnetic, nonmagnetic, and magnetic characters. − The origin of the observed RT ferromagnetism is still highly controversial. The different magnetic mechanisms in DMOs, such as RKKY exchange interaction, double exchange interaction, as well as bound magnetic polaron (BMP) model-based point defects, have been proposed for TM-doped In 2 O 3 in previous reports. , The nanosized TM precipitates in the In 2 O 3 host may also induce ferromagnetism, which is undesirable for practical applications.…”