Structure–Property Correlations in Rare‐Earth‐Substituted BiFeO
            <sub>3</sub>
            Epitaxial Thin Films at the Morphotropic Phase Boundary

Kan, Daisuke; Cheng, Ching-Jung; Valanoor, Nagarajan; Takeuchi, Ichiro

doi:10.1002/9783527654864.ch6

Cited by 2 publications

(1 citation statement)

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“…While BFO was considered early as a possible alternative to lead-based piezoelectrics, its electromechanical coefficients are not large enough to compete with more conventional ferroelectrics. To explore the possibility of a MPB in the BFO system [171], Fujino et al prepared rare-earth substituted BFO films by a combinatorial method (i.e. compositional spread samples) [166].…”

Section: Morphotropic Phase Boundary and Antiferroelectric State Indu...mentioning

confidence: 99%

BiFeO₃epitaxial thin films and devices: past, present and future

Sando

Barthélémy

Bibès

2014

J. Phys.: Condens. Matter

278

217

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The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting.

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Section: Morphotropic Phase Boundary and Antiferroelectric State Indu...mentioning

confidence: 99%

BiFeO₃epitaxial thin films and devices: past, present and future

Sando

Barthélémy

Bibès

2014

J. Phys.: Condens. Matter

278

217

View full text Add to dashboard Cite

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Thin-film ferroelectric materials and their applications

2016

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| Ferroelectric materials, because of their robust spontaneous electrical polarization, are widely used in various applications. Recent advances in modelling, synthesis and characterization techniques are spurring unprecedented advances in the study of these materials. In this Review, we focus on thin-film ferroelectric materials and, in particular, on the possibility of controlling their properties through the application of strain engineering in conventional and unconventional ways. We explore how the study of ferroelectric materials has expanded our understanding of fundamental effects, enabled the discovery of novel phases and physics, and allowed unprecedented control of materials properties. We discuss several exciting possibilities for the development of new devices, including those in electronic, thermal and photovoltaic applications, and transduction sensors and actuators. We conclude with a brief survey of the different directions that the field may expand to over the coming years. REVIEWS NATURE REVIEWS | MATERIALS VOLUME 2 | ARTICLE NUMBER 16087 | 1 © 2 0 1 7 M a c m i l l a n P u b l i s h e r s L i m i t e d , p a r t o f S p r i n g e r N a t u r e . A l l r i g h t s r e s e r v e d .

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Structure–Property Correlations in Rare‐Earth‐Substituted BiFeO ₃ Epitaxial Thin Films at the Morphotropic Phase Boundary

Cited by 2 publications

References 43 publications

BiFeO₃epitaxial thin films and devices: past, present and future

BiFeO₃epitaxial thin films and devices: past, present and future

Thin-film ferroelectric materials and their applications

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Structure–Property Correlations in Rare‐Earth‐Substituted BiFeO 3 Epitaxial Thin Films at the Morphotropic Phase Boundary

Cited by 2 publications

References 43 publications

BiFeO3epitaxial thin films and devices: past, present and future

BiFeO3epitaxial thin films and devices: past, present and future

Thin-film ferroelectric materials and their applications

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Product

Resources

About

Structure–Property Correlations in Rare‐Earth‐Substituted BiFeO ₃ Epitaxial Thin Films at the Morphotropic Phase Boundary

BiFeO₃epitaxial thin films and devices: past, present and future

BiFeO₃epitaxial thin films and devices: past, present and future