Structured design of an integrated subscriber line interface system and circuit

Tajalli, Armin; Atarodi, M.

doi:10.1109/iscas.2003.1205962

Cited by 2 publications

(2 citation statements)

References 12 publications

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“…Also, a high sheet-resistance device is required to minimize loading effects and silicon area. For amplifiers, dc gain, GBW, and phase margin are important parameters, which determine stability and accuracy of the system [14].…”

Section: System Designmentioning

confidence: 99%

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Structured Design of Integrated Subscriber Line Interface System and Circuit

Tajalli

Atarodi²

2005

Analog Integr Circ Sig Process

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A structured design of Subscriber Line Interface System and Circuit will be described. A high level synthesis allows extracting overall system and circuit requirements to satisfy the desired specifications, standards, and a robust implementation. For this purpose, first the output driving stage will be analyzed and then, dc, ac, and longitudinal balance feedbacks will be considered. Then based on extracted system specifications, optimum circuit design of line-driver will be described. High-level design of line-driver as the most important circuit block which is optimized for stability, accuracy, area, and power dissipation will be elaborated.

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Section: System Designmentioning

confidence: 99%

“…Conclusions will appear in Section 5. Figure 1 shows a simplified overall view of proposed line interface circuit [5,14]. In this configuration A v1 and A v2 are driving the line and A v converts the 2-wire (2W) signal to 4-wire (4W) one.…”

Section: Introductionmentioning

confidence: 99%

Structured Design of Integrated Subscriber Line Interface System and Circuit

Tajalli

Atarodi²

2005

Analog Integr Circ Sig Process

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Part I: Mixed-Signal Performance of Various High-Voltage Drain-Extended MOS Devices

Shrivastava

Baghini

Gossner

et al. 2010

IEEE Trans. Electron Devices

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Abstract-In this paper, the optimization issues of various drain-extended devices are discussed for input/output applications. The mixed-signal performance, impact of process variations, and gate oxide reliability of these devices are compared. Lightly doped drain MOS (LDDMOS) was found to have a moderate performance advantage as compared to shallow trench isolation (STI) and non-STI drain-extended MOS (DeMOS) devices. Non-STI DeMOS devices have improved circuit performance but suffer from the worst gate oxide reliability. Incorporating an STI region underneath the gate-drain overlap improves the gate oxide reliability, although it degrades the mixed-signal characteristics of the device. The single-halo nature of DeMOS devices has been shown to be effective in suppressing the short-channel effects.Index Terms-Drain-extended MOS (DeMOS), hot carrier, input/output, lightly doped drain MOS (LDDMOS), mixed signal, reduced surface field (RESURF), reliability.

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Structured design of an integrated subscriber line interface system and circuit

Cited by 2 publications

References 12 publications

Structured Design of Integrated Subscriber Line Interface System and Circuit

Structured Design of Integrated Subscriber Line Interface System and Circuit

Part I: Mixed-Signal Performance of Various High-Voltage Drain-Extended MOS Devices

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