1994
DOI: 10.1016/0039-6028(94)90075-2
|View full text |Cite
|
Sign up to set email alerts
|

Structures of clean and nickel-containing high Miller index surfaces of silicon

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

1999
1999
2022
2022

Publication Types

Select...
4
2
1

Relationship

0
7

Authors

Journals

citations
Cited by 24 publications
(3 citation statements)
references
References 29 publications
0
3
0
Order By: Relevance
“…On the other hand, potential applications of high-index silicon surfaces in the semiconductor industry have been stimulating investigations of high-index silicon surfaces. 4,5 Although such investigations were started in the early 1980s, 6,7,8 they became hot only recently: [9][10][11][12][13][14][15][16][17][18][19][20] first, the most stable high-index surface Si͑113͒ ͑Refs. 10-14͒ and then others.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…On the other hand, potential applications of high-index silicon surfaces in the semiconductor industry have been stimulating investigations of high-index silicon surfaces. 4,5 Although such investigations were started in the early 1980s, 6,7,8 they became hot only recently: [9][10][11][12][13][14][15][16][17][18][19][20] first, the most stable high-index surface Si͑113͒ ͑Refs. 10-14͒ and then others.…”
Section: Introductionmentioning
confidence: 99%
“…10-14͒ and then others. [15][16][17][18][19][20] Germanium surfaces, including both low-and high-index ones, have received much less attention than their silicon counterpart only because of their less importance in technological applications. 2,21 However, we believe that from a basic scientific point of view, investigations of germanium surfaces should not be neglected and that a comparison of germanium surfaces with their silicon counterpart can make our knowledge about group-IV semiconductor surfaces and interfaces more systematic and thus more comprehensive.…”
Section: Introductionmentioning
confidence: 99%
“…The rectangular Si(111) substrate (n-type, ~ 0.1 Ω cm) of 1×7×0.3 mm 3 was ultrasonically pre-cleaned in acetone, ethanol and deionized water. In the preparation chamber, a clean well-ordered 7×7 reconstructed surface can be obtained after repeatedly ashed [22,23]. During the adsorption process of CH 3 OH (or NH ), the mass spectrometer was turned on to monitor the gaseous molecules composition in the observation chamber.…”
Section: Methodsmentioning
confidence: 99%