Studies of 3D Ions in III-V Materials by Thermally-Detected Absorption Spectroscopy-Problem of GaP:Cr

Vasson, A.; El-Metoui, M.; Erramli, A; Gavaix, A.; Bates, C A

doi:10.4028/www.scientific.net/msf.143-147.833

Cited by 6 publications

(5 citation statements)

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“…It appears to be a typical curve for a tetragonally distorted center with the zero-field splitting of the ground state due to the tetragonal distortion larger than the Zeeman splitting as observed by TD EPR for the most intense resonance of Cr 2ϩ in GaAs, 34 InP, 35 and GaP. 36 In addition to the signals detected at higher magnetic fields, several broad lines were observed in the low-field range which cannot be unambiguously identified as Mn Ga 3ϩ ͑A 0 ͒ resonances.…”

Section: B Conventional Eprmentioning

confidence: 83%

Neutral manganese acceptor in GaP: An electron-paramagnetic-resonance study

et al. 1996

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In order to clarify the nature of the neutral Mn acceptor in GaP, we have carried out optical-absorption and electron-paramagnetic-resonance ͑EPR͒ experiments using both conventional and thermally detected EPR on semi-insulating GaP:Mn. In thermal equilibrium at low temperatures, all the manganese occurs in the charged acceptor state Mn Ga 2ϩ ͑A Ϫ ͒. By illumination with photon energies greater than 1.2 eV, it can be partially converted into the neutral charge state. The arising photostimulated EPR spectrum shows the characteristic of a tetragonally distorted center with an integer spin. The resonance lines are detectable only at temperatures below 7 K, and their linewidth of about 50 mT is due to the unresolved Mn-hyperfine splitting. We interpret the experimental data in terms of Mn Ga 3ϩ ions on strain-stabilized sites of tetragonal symmetry due to a strong T ⑀ Jahn-Teller coupling within the 5 T 2 ground state. Such a behavior is expected for a 3d 4 defect, as observed for the isoelectronic impurity Cr 2ϩ in GaAs, and other tetrahedrally coordinated semiconductors. The analysis of the EPR spectra thus verifies that, in GaP, the neutral charge state of the Mn acceptor is Mn Ga 3ϩ ͑A 0 ͒ in contrast to its behavior in GaAs and InP. ͓S0163-1829͑96͒06139-5͔

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Section: B Conventional Eprmentioning

confidence: 83%

Neutral manganese acceptor in GaP: An electron-paramagnetic-resonance study

et al. 1996

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“…with S = S = 2 and where Oz, the tetragonal distortion axis, is along The values of the parameters g , g ⊥ , a, D and F are obtained by the minimization technique fitting with theory (1) a set of TD-EPR lines attributed to isolated Cr 2+ ion. These data points (×), corresponding to 1-2 and 3-4 transitions (El Metoui 1994, Vasson et al 1994, are shown in figure 1, at 9.3 GHz, for the magnetic field B rotating in the (001) plane. The best fit with the model is obtained with the values given in table 1.…”

Section: The Spin Hamiltonianmentioning

confidence: 99%

“…Their analysis revealed that the Cr 2+ ions are on strain-stabilized sites of tetragonal symmetry due to T ⊗ e Jahn-Teller (JT) coupling. The problem of GaP:Cr has been mentioned by Vasson et al (1994) and Ulrici and Kreissl (1996). But, in the above mentioned articles, the values of spin Hamiltonian parameters have been estimated for isolated Cr 2+ in GaP, tetragonal symmetry fourth order terms being left aside.…”

Section: Introductionmentioning

confidence: 99%

“…The main purpose of the present article is to estimate the JT effect in the 5 T 2 state of isolated Cr 2+ in GaP. Firstly, the accurate values of the five parameters of spin Hamiltonian are determined from TD-EPR experiments (El Metoui 1994, Vasson et al 1994. Secondly, with zero magnetic field and zero strain the 5 T 2 state can be described by an effective Hamiltonian.…”

Section: Introductionmentioning

confidence: 99%

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Studies of the Jahn-Teller system

Gavaix¹

1998

J. Phys.: Condens. Matter

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“…For Cr þ and Cr 4þ , the analysis of the EPR spectra revealed that they are due to isolated Cr atoms on Ga sites [1][2][3]. The same was deduced for Cr 2þ from EPR and optical absorption [4][5][6][7]. However, for the spectroscopic results revealing Cr 3þ it is not yet clarified which are due to isolated and which are due to complexed Cr 3þ (see [8] and references therein).…”

Section: Introductionmentioning

confidence: 99%

Electrical and Optical Properties of Chromium Doped GaP

Ajjel

Maaref

Zerrai

et al. 2001

phys. stat. sol. (a)

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Subject classification: 71.55Eq; S7.11The electrical properties of p-type GaP : Cr : Zn and n-type GaP : Cr : S samples have been studied using Deep Level Transient Spectroscopy (DLTS). In GaP : Cr : Zn a deep hole emitting level is detected with a thermal activation energy of E v þ 0.48 eV and attributed to the Cr 3þ/4þ donor level of substitutional Cr Ga . In GaP : Cr : S a deep electron emitting level is detected at E c À 0.30 eV and attributed to the Cr þ/2þ double acceptor level of Cr Ga . The emission rates of both levels are found to be electric field dependent which can be fitted by a Poole-Frenkel model. Deep Level Optical Spectroscopy (DLOS) measurements were performed on both levels in the filled as well as in their emptied state. The Frank-Condon shifts were estimated from these measurements. The spectral shape of these DLOS spectra is discussed as due to photoionization transitions.

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Studies of 3D Ions in III-V Materials by Thermally-Detected Absorption Spectroscopy-Problem of GaP:Cr

Cited by 6 publications

References 0 publications

Neutral manganese acceptor in GaP: An electron-paramagnetic-resonance study

Neutral manganese acceptor in GaP: An electron-paramagnetic-resonance study

Studies of the Jahn-Teller system

Electrical and Optical Properties of Chromium Doped GaP

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