Studies of Diffusion Processes in AlAs/GaAs Resonant-Tunneling Heterostructures

Abstract

The problem of reliability prediction and assurance is characteristic of wireless devices based on nanoscale multilayer heterostructures because of the sensitivity of heterostructures’ parameters to the degradation processes due to the thinness of layers. In the current work, the degradation of the nanoscale AlAs/GaAs resonant-tunneling heterostructures due to the diffusion of the constituent elements was investigated. Analysis and comparison of data on Al and Si diffusion coefficients in GaAs shows that they strongly vary depending on the conditions of heterostructure fabrication. This happens while the defect density of the grown heterostructures depends on a large number of technological factors such as the substrate temperature during molecular beam epitaxy, chamber pressure, annealing temperature and time, defect density in the initial substrate, and many others. The values of the diffusion coefficients obtained by the authors of this article by IR spectral ellipsometry are consistent with the data of foreign researchers. This allows their use to predict the reliability of resonant tunneling diodes and nonlinear radio transmitters based on them.

Methodology of technological and operational factors accounting in the process of complex optimal design of microand nanodevices manufactured using group technologies

“…The described methodology was developed on the example of micro-and nanoelectronics devices -SHF radio signals mixer and rectifier, in which the resonanttunnelling diode (RTD) was used as a nonlinear element. The methodical basis was the results of the research of the RTD degradation processes under the influence of temperature factor and ionizing radiation, carried out by the authors [8][9][10][11][12], and the RTD diagnostic model based on these results [13][14].…”

Estimation of Thermal Destruction of AuGeNi Ohmic Contacts of Resonant Tunneling Diodes on the Basis of Nanoscale AlAs/GaAs Heterostructures

“…A number of works are devoted to the reliability of RTD and nonlinear radiosignal transmitters on its basis where reliability of RTD is studied based on the research of RTD heterostructure thermal destruction processes due to elemental interdiffusion [6,7]. It was shown, how degradation processes impact on the IV curve shape of RTD and the parameters of the radiosignal mixers based on RTD.…”

Prediction of electronic nanodevices technical status and reliability based on analysis of their performance parameters kinetics under the influence of external factors

“…The results of the RTD parameter kinetic studies under the influence of the elevated temperature are shown in [13][14][15][16].…”